12results about How to "Shorten the current path" patented technology

The present disclosure relates to a power module comprising: a first substrate formed by stacking a plurality of layers in a first axis direction; a semiconductor chip electrically connected to the first substrate; a printed circuit board connected to the semiconductor chip and including at least one step portion having a reduced thickness smaller than a thickness of the surrounding region in the first axis direction; and at least one metal block mounted on the at least one step portion in the first axis direction and electrically connected to the first substrate.

The application discloses a battery and a manufacturing method thereof, and the battery comprises a positive current collector layer, which is a composite structure with dense normal layers and porous functional layers alternately distributed formed on an aluminum foil substrate through electric field assisted selective etching, a positive electrode sheet coated with positive active material aluminum powder and subjected to formation treatment, and a top cover assembly and a bottom cover assembly connected with the positive and negative electrodes through full-tab cross-section laser welding and full-tab end face laser welding respectively; the manufacturing method comprises the steps of preparing a composite positive current collector layer, coating active material, assembling a battery cell, laser welding and packaging, etc. The specific surface area and ion transmission efficiency are greatly improved through the composite current collector layer structure, the internal resistance and temperature rise are reduced by combining the optimized full-tab welding process, so that the rate performance, cycle stability and thermal safety of the battery are significantly improved, and the battery is suitable for the manufacturing of high-power long-life batteries such as electric vehicles and energy storage systems.

The utility model discloses an ESD (Electro-Static Discharge) protection device with low dynamic on-resistance, which comprises a P + substrate material region, and an N-buffer layer, an N-epitaxial layer, a P well region, a P + diffusion region 1, a P + diffusion region 2 and an N + diffusion region which are sequentially arranged on the surface of the P + substrate material region from bottom to top, and is sequentially divided into a DIODE1 unit, a DIODE2 unit and an NPN unit from left to right through two groove region electrical isolation, the trench region extends from the upper surface to the P + substrate material region. According to the structure, electrical isolation is carried out through the trench region, and the breakdown voltage depends on the concentration distribution of the P + diffusion region and the Pwell region, so that the current path is shortened, the dynamic on-resistance is reduced, and the ESD current discharge capability is improved. And on the other hand, the new structure comprises an N-buffer layer and an N-epitaxial region which are grown on a P + substrate material, so that the influence of the parasitic effect of the conventional ESD protection device structure with low dynamic on-resistance is improved. Meanwhile, the trench region plays a role in electrical isolation, so that the area of the device is reduced.

The invention discloses an electrochromic device and electronic equipment. The electrochromic device comprises two parallel and opposite electrode layers, the electrochromic functional layer is positioned between the electrode layers; the electrode layer is internally provided with at least two main segmentation gaps, and the electrode layer is segmented into a plurality of independent electrode blocks by the main segmentation gaps; the main segmentation gaps in the two electrode layers are in mirror symmetry; a plurality of parallel auxiliary segmentation gaps are formed in the electrode blocks, and the electrode blocks are segmented into a plurality of sub-electrodes by the auxiliary segmentation gaps; one end of the auxiliary segmentation gap is cut off at one main segmentation gap adjacent to the electrode block, and the other end is cut off at the edge of the electrode layer included in the electrode block; the direction perpendicular to the plane where the electrode layer is located is the first direction. For the two electrode blocks which are vertically opposite in the first direction, the auxiliary segmentation gaps in the two electrode blocks intersect in different planes, so that the electrochromic device is divided into a plurality of pixels. According to the invention, the dynamic display of real-time transformation can be realized, and the uniformity and response speed of electrochromism are improved.

The utility model provides a capacitor assembly, which comprises a plurality of capacitor modules, the plurality of capacitor modules are connected in sequence to form the capacitor assembly, and each capacitor module comprises a capacitor with a connecting end and a fixed end which are arranged oppositely; the busbar is arranged at the connecting ends of the plurality of capacitors, and the plurality of capacitors are electrically connected through the busbar; the base is arranged at the fixed ends of the plurality of capacitors, the plurality of capacitors are fixed on the base, connecting pieces are arranged on the side edges of the base, and the connecting pieces on the corresponding side edges of two adjacent bases are arranged in a staggered manner. According to the technical scheme of the utility model, the problem that the current path is influenced by the large overall size of the capacitor assembly in the prior art can be solved.

The invention provides a stacked transistor, a preparation method thereof, a device and electronic equipment. The method comprises the following steps: forming a first active structure and a second active structure which are stacked on a substrate; forming a first source-drain epitaxy of the first transistor based on the first active structure; reversing the wafer and thinning the substrate; forming a second source-drain epitaxy of the second transistor based on the second active structure; forming a second source drain metal, a second interlayer dielectric layer, a second gate structure and a second back-end interconnection layer of a second transistor based on the second active structure; a first interlayer dielectric layer and a first gate structure of the first transistor are formed based on the first active structure; forming a source-drain interconnection through hole and first source-drain metal of the first transistor in a source-drain region of the first transistor; the source-drain interconnection through hole penetrates through the first source-drain epitaxy and extends into the second source-drain epitaxy; the second source-drain epitaxy and the first source-drain epitaxy are electrically connected through a source-drain interconnection through hole; and forming a first back-end interconnection layer of the first transistor.

The utility model discloses a grounding assembly and a semiconductor process chamber, and relates to the technical field of semiconductors. The grounding assembly is used for the semiconductor process chamber and comprises a conductive sleeve, an elastic assembly arranged in the conductive sleeve and a second conductive column, one of the conductive sleeve and the second conductive column is used for being electrically connected with an internal part of the semiconductor process chamber, and the other one of the conductive sleeve and the second conductive column is used for being grounded. According to the scheme, the problems that the grounding performance of internal parts of a current semiconductor process chamber is poor, particles are generated by moving parts of a grounding assembly, the conductive ring cannot be electrically connected with the internal parts due to clamping stagnation of the conductive ring, and the grounding assembly is inconvenient to install and maintain can be solved.

The utility model discloses a kind of power module based on silicon carbide device, including main power plate, silicon carbide chip and radiator, radiator is annular, and the outer edge surface of radiator is polygonal, the outer edge surface of each radiator is attached with silicon carbide chip, the inner edge surface of radiator is provided with the fin of fish fin shape, radiator is attached on main power plate.The utility model discloses a kind of power module based on silicon carbide device, using main power plate and coaxial circle design of drive board, radiator is attached on main power plate, and silicon carbide chip is attached on the outer edge surface of radiator, to shorten current path, reduce parasitic inductance, reduce thermal coupling by symmetrical layout, the central airflow channel (diameter 40mm) formed by combining fin center Forced convection, temperature difference can be reduced to <5 ℃, in combination with the fan of radiator top, low thermal resistance, high power density and electromagnetic compatibility optimization can be realized.

The application discloses an electrochromic device and an electronic device. The electrochromic device comprises two parallel and opposite electrode layers, an electrochromic functional layer between the electrode layers, at least two main division gaps in the electrode layers, the main division gaps dividing the electrode layers into multiple independent electrode blocks, the main division gaps in the two electrode layers being mirror-symmetrical, multiple parallel secondary division gaps in the electrode blocks, the secondary division gaps dividing the electrode blocks into multiple sub-electrodes, one end of the secondary division gaps being cut off at a main division gap adjacent to the electrode block, the other end of the secondary division gaps being cut off at the edge of the electrode layer included in the electrode block, the direction perpendicular to the plane where the electrode layers are located being a first direction, and the secondary division gaps in the two electrode blocks being intersected in different planes for the two electrode blocks vertically opposite in the first direction, so that the electrochromic device is divided into multiple pixels. The application can realize real-time conversion dynamic display, improve the uniformity and response speed of electrochromism.

The invention belongs to the technical field of LED chips, and provides a flip LED driving chip and a detection device.The flip LED driving chip comprises an LED chip, a plurality of contact pads are fixedly arranged at the lower end of the LED chip, and convex points are fixedly arranged at the lower ends of the contact pads; the heat-conducting layer is fixedly mounted at the lower end of the LED chip, the thickness of the heat-conducting layer is smaller than that of the contact pad, a plurality of holes are formed in the lower end of the heat-conducting layer, the contact pad penetrates through the holes, and the heat-conducting material of the heat-conducting layer is ceramic; according to the invention, the LED chip is inversely welded on the PCB substrate bonding pad by using the salient points, so that the refraction and reflection loss of light rays in the packaging material can be reduced, more light rays can be directly emitted, the light extraction efficiency is improved, and compared with the traditional normal LED driving chip packaging, because a space does not need to be reserved above the chip for lead bonding, the light extraction efficiency is improved. Therefore, the packaging volume can be obviously reduced, the design of the flip LED chip allows a more compact packaging structure, and the realization of miniaturization and light weight of an LED device is facilitated.

The utility model discloses a lead frame and a Cascode packaging structure, and the packaging structure comprises a frame body, an insulating layer located on the frame body, a conductive layer located on the insulating layer, a pin layer located on the conductive layer, and an MOSFET chip and an HEMT chip which are packaged on the conductive layer. The conducting layer comprises a first conducting layer and a second conducting layer which are distributed at an interval, and a third conducting layer and a fourth conducting layer which are positioned on two sides of the first conducting layer and the second conducting layer, the MOSFET chip is packaged on the first conducting layer, the HEMT chip and the first pin layer are packaged on the second conducting layer, the second pin layer is packaged on the third conducting layer, and the fourth conducting layer is packaged on the third conducting layer. And the third pin layer is packaged on the fourth conductive layer. According to the invention, the Cascode packaging of the HEMT chip and the MOSFET chip can be realized in one lead frame, the length of the bonding wire and the current path are shortened to the greatest extent in the Cascode packaging structure, and the loss is reduced.

This invention relates to the field of secondary battery technology and discloses a wound battery. The negative electrode sheet contains silicon-based material with a silicon content of ≥3% by mass. The negative electrode sheet has multiple negative electrode tabs. The arc segment of the positive electrode sheet has a first groove. The arc segment of the negative electrode sheet has a first concave-convex structure including a first protrusion and a first recess, and the projection of the first protrusion is at least partially located within the first groove. This invention reduces internal resistance and uniforms current distribution through the multi-tab structure; mitigates heat generation from lithium desorption through the first groove; releases expansion stress through the first concave-convex structure; and effectively suppresses heat accumulation in the arc region by forming a heat dissipation space through the cooperation of the first protrusion and the first groove, thereby improving the rate performance and high-temperature cycle performance of the battery.