Flat package crimping type extraction electrode insulated gate bipolar transistor element

Abstract

The invention provides a flat package crimping type extraction electrode insulated gate bipolar transistor element. The flat package crimping type extraction electrode insulated gate bipolar transistor element comprises an IGBT chip. The flat package crimping type extraction electrode insulated gate bipolar transistor element further comprises a chip mode carrier and a housing made from ceramic. The housing is provided with a chip installation hole in the vertical direction. The chip mode carrier is provided with a chip clamping groove. The IGBT chip is fixed in the chip clamping groove in the chip mode carrier. The chip mode carrier is fixed in the chip installation hole at the middle portion. An upper extraction electrode plate used as the IGBT emitter is arranged above the chip mode carrier. The upper extraction electrode is made from a metal material. The upper extraction electrode plate is installed in the chip installation hole at the upper portion. The lower end surface of the upper extraction electrode plate is attached to the circuit port of the emitter on the IGBT chip. The objective of the invention is to provide a flat package crimping type extraction electrode insulated gate bipolar transistor element having advantages of small size, compact structure, good heat dissipation performance, long service life, low failure occurrence rate, high reliability and convenient utilization.

Description

technical field [0001] The invention relates to a flat package crimping lead-out electrode insulated gate bipolar transistor element. Background technique [0002] In the existing modular package insulated gate bipolar transistor (IGBT), the semiconductor chip and the lead-out electrode are connected by spot welding and tin brazing with multiple aluminum wires, the outer shell is made of plastic, and the internal seal uses organic fillers. Type-packaged IGBTs have the following defects: [0003] 1. In order to achieve electrical insulation between the die and the base plate, the original modular packaging technology is to install an insulating sheet between the die and the base plate (the material is aluminum nitride, aluminum oxide, beryllium oxide, etc. ), thus increasing the thermal resistance between the component die and the bottom plate, reducing the heat dissipation capability of the component. [0004] 2. Affected by factors such as uneven flow capacity of aluminum...

AI Technical Summary

Problems solved by technology

[0003] 1. In order to achieve electrical insulation between the die and the base plate, the original modular packaging technology is to install an insulating sheet between the die and the base plate (the material is aluminum nitride, aluminum oxide, beryllium oxide, etc. ), thus increasing the thermal resistance between the element die and the bottom plate, reducing the heat dissipation capability of the element

[0004] 2. Affected by factors such as uneven flow capacity of aluminum wire and solder joints, low utilization rate of chip conductive surface, and poor heat dissipation capacity, the actual nominal flow capacity of the component is much smaller than its actual flow capacity

Less able to withstand current surges

[0005] 3. Due to the modular package structure, its complex electrodes and excessive aluminum wires cause its distributed inductance to be large, especially in the case of high-frequency operation, which will limit the use of components to a certain extent

[0006] 4. Due to the use of brazing and spot welding in the modular packaging structure, especially there are more and thinner aluminum wires, there will be serious zero-gram hidden dangers, so it frequently occurs weightlessness and overweight in aerospace Field usage is restricted

[0007] 5. The IGBT in the modular package has a plastic shell, so its ability to resist external impact, fire prevention and explosion protection is poor

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