34results about How to "Short current path" patented technology

The invention is a light emitter to emit light after connected with power supply, at least comprising: luminous body having at least two electrodes to connect with power supply to make the luminous body offer a light source where the electrodes and the light outgoing surface of the luminous body are on the same side; bearing body with a groove to hold the luminous body, where the groove corresponds to the light outgoing surface and forms a diminishing shape close to the light outgoing and is equipped with connectors to connect with the light outgoing in the holding positions; and the invention has thin structure and makes the supply current path have advantages of low series thermal resistance and low cost, able to further increase light receiving efficiency by increasing groove depth.

The present invention provides a manufacturing method of a semiconductor device and the semiconductor device. The manufacturing method includes: providing a semiconductor substrate on which a gate structure is formed; performing a lightly doped source-drain ion implantation process to Forming lightly doped source and drain regions in the semiconductor substrate on both sides of the gate structure; performing pocket region ion implantation to form a pocket ion implantation region at the bottom of the lightly doped source and drain region; performing source and drain ion implantation implanted to form source and drain regions in the semiconductor substrate on both sides of the gate, wherein the lightly doped source and drain regions, the pocket ion implantation region and the source and drain regions are jointly formed in the There are source and drain electrodes with inclined topography under the gate structure. According to the manufacturing method of the semiconductor device and the same area of ​​the semiconductor device, it can have a higher current capability (current capability of the transmission line pulse test), so it has higher robustness than conventional technology.

A thin stacked semiconductor device suitable for high speed operation. A plurality of specified circuits are formed on one surface of a semiconductor substrate while being arranged, and wiring and insulating layers being connected electrically with the circuits are laminated and formed sequentially in a specified pattern to form a multilayer wiring part. At the stage for forming the multilayer wiring part, a filling electrode is formed on the semiconductor substrate such that the surface is covered with an insulating film, a post electrode is formed on specified wiring at the multilayer wiringpart, a first insulating layer is formed on one surface of the semiconductor substrate, the surface of the first insulating layer is removed by a specified thickness to expose the post electrode, theother surface of the semiconductor substrate is ground to expose the filling electrode and to form a through-type electrode, forward end of the through-type electrode is projected by etching one surface of the semiconductor substrate, a second insulating layer is formed on one surface of the semiconductor substrate while exposing the forward end of the through-type electrode, bump electrodes areformed on both electrodes and then the semiconductor substrate is divided to form a semiconductor device. A plurality of semiconductor devices thus obtained are stacked and secured at the bump electrodesthus manufacturing a stacked semiconductor device.

The invention discloses a method for laminating A-type busbars of a high-power pulse switch power supply. The method is structurally characterized in that four rectifier bridge modules are selected to be connected in parallel and rectified, and two IGBT (insulated gate bipolar translator) modules are selected to output a main circuit; a filter capacitor, a power switching tube or a rectifier, andan inductor or a transformer in the main circuit are placed close to each other; the directions of the components are determined, that is, in design of the high power pulse switch power supply, a capacitor plate, A, B, C, anode phase input copperplate are installed by copperplate lamination, therefore, the wiring is reduced, the influence of the lead inductance and resistance is eliminated, electromagnetic interference is further reduced and the purpose to inhibit electromagnetic interference is achieved.

The invention provides a converter, which includes a converter body and a control device, and the converter body, the control device and a compressor are all arranged on a motor. Wherein, the converter body is arranged on the top of the motor, and the control device is arranged in the inner cavity of the motor. The converter provided by the invention has compact structure and convenient wiring.

The invention relates to a vertically-partitioned metallized grid safe film electrode structure, which comprises an upper layer metallized safe film and a lower layer metallized safe film. One side of each layer of the metallized safe films is a clad layer-free residual side, and the other side of each layer of the metallized safe films is a clad layer-thickened side; continuous clad layer zones and grid pattern zones which have roughly equal width are vertically distributed on a clad layer between the residual side and thickened side at intervals and alternately; small electrodes in the gridpattern zones do not interconnect directly; when two layers of the metallized safe films are overlaid for wrapping a capacitor, the residual sides and the clad layer-thickened sides of the upper and lower layers correspond to each other alternately; and the continuous clad layer zones and the grid pattern zones of the upper and lower layers correspond to each other alternately at the same time. The vertically-partitioned metallized grid safe film electrode structure has small overall heat productivity, is suitable for manufacturing alternating-current capacitors and high-frequency capacitors,increases safe reliability and service life, reduces the loss rate of the effective area of the film due to the gap stripes of an pattern, and reduces the manufacturing cost of a safe film capacitor.

The invention provides a converter. The converter comprises a converter body and a control device, and the converter body, the control device and a compressor are all arranged on a motor. The converter body is arranged at the top of the motor, and the control device is arranged in an inner cavity of the motor. The converter provided by the invention is compact in structure and convenient in wiring.

The invention discloses a horizontally polarized bounded wave electromagnetic pulse simulator, a wire grid plate and a wire grid layout method. The present invention adopts a wire grid layout mode in which the number of bus grids pulled out from the edge of the upper half of the biconical circular section is smaller than the number of bus grids drawn from the edge of the lower half, reducing the number of bus grids constituting the simulator The use of: Through a specific layout, all the wire grids pulled out from the upper half edge of the biconical section are directly connected to the corresponding part of the wire grid pulled out from the lower half edge at a certain height from the ground , reducing the length of all wire grids pulled from the edge of the upper half of the biconical section. Compared with the uniform layout method, the current path flowing through the wire grid in the present invention is the shortest, so the electromagnetic wave radiated to the outside of the two polar plates through the wire grid is attenuated, which makes the minimum value of the field peak value in a certain area inside the simulator not decrease. , instead all increases.

The present invention provides a light emitting diode chip, which comprises: a first type semiconductor layer, a second semiconductor layer and an active layer sandwiched between them; a dielectric layer located on the lower surface of the light emitting epitaxial stack, It has an array of conductive vias; a metal conductive layer is located on the lower surface of the dielectric layer, fills the conductive vias, and forms an ohmic contact with the light-emitting epitaxial stack; a conductive substrate is located on the metal conductive layer The lower surface is used to support the light-emitting epitaxial stack; the first electrode is located on the upper surface of the light-emitting epitaxial stack, including pad electrodes and finger electrodes; between the conductive via array and the finger electrodes There is a rotation angle between them, the rotation angle is selected such that a preferred number of conductive vias are not blocked by the pad electrodes and finger electrodes. The invention also provides a method for manufacturing the foregoing light-emitting diode chip.

The invention relates to a plug-in connector (1), wherein at least a part of a busbar element (10) is arranged in such a way on the boundary between an associated conductor socket (3) and an associated contact pin receiving opening (8) In the region, so that this part of the contact rail element (10) is located between the contact pin (14) and the electrical conductor (5) and is in contact with the contact pin (14) and the electrical conductor (5) in a conductive manner superior. The busbar element (10) has an elastic contact area in the contact pin receptacle (8) for connecting the busbar element (10) with a contact pin (14) which can be introduced into the associated contact pin receptacle (8) by spring force ) in conductive contact.