The invention provides an integrated radiator IGBT power device with a low-inductance composite busbar structure, which comprises a radiator, a lining plate, a PCB circuit, a terminal and a low-inductance composite busbar, the lining plate is interconnected with the radiator, the PCB circuit and the terminal are arranged on the lining plate, and the low-inductance composite busbar is connected with the terminal; the low-inductance composite busbar comprises a DC + stage of a half-bridge IGBT device, a DC - stage of the half-bridge IGBT device and an AC stage of the half-bridge IGBT device, wherein the DC + stage of the half-bridge IGBT device and the DC - stage of the half-bridge IGBT device are oppositely arranged, and the AC stage of the half-bridge IGBT device is arranged on one side of the DC + stage of the half-bridge IGBT device and the DC - stage. According to the invention, the low-inductance composite busbar is integrated, so that the IGBT device is more compact, the occupied space is small, and the contact thermal resistance and resistance of the device caused by connection can be effectively reduced; the design freedom degree of the low-inductance composite busbar is high, and parasitic parameters are small; a power assembly formed by assembling the device is large in spatial arrangement freedom degree, and parasitic parameters can also be reduced. The stray inductance is low, the current path is short, the stress borne by the chip can be effectively reduced, and the reliability of the device can be improved.