Light emitting diode chip and manufacturing method therefor

Abstract

The invention provides a light emitting diode chip. The light emitting diode chip comprises a light emitting epitaxial laminated layer, a dielectric layer, a metal conductive layer, a conductive substrate, and a first electrode, wherein the light emitting epitaxial laminated layer comprises a first type semiconductor layer, a second semiconductor layer and an active layer sandwiched between the first type semiconductor layer and the second semiconductor layer; the dielectric layer is positioned on the lower surface of the light emitting epitaxial laminated layer and provided with a conductive through hole array; the metal conductive layer is positioned on the lower surface of the dielectric layer; the conductive through hole is filled with the metal conductive layer; the metal conductive layer and the light emitting epitaxial laminated layer form ohmic contact; the conductive substrate is positioned on the lower surface of the metal conductive layer for supporting the light emitting epitaxial laminated layer; the first electrode is positioned on the upper surface of the light emitting epitaxial laminated layer; the first electrode comprises a bonding pad electrode and a finger-shaped electrode; a rotation angle is between the conductive through hole array and the finger-shaped electrode; and the selection of the rotation angle enables the conductive through holes with the preferable quantity to be not shielded by the bonding pad electrode and the finger-shaped electrode. The invention also provides a method for manufacturing the light emitting diode chip.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a light-emitting diode chip and a manufacturing method thereof. Background technique [0002] In recent years, light emitting diodes (light emitting diodes, referred to as LEDs) have been widely used and play an increasingly important role in various display systems, lighting systems, automobile taillights and other fields. [0003] figure 1 An existing vertical light-emitting diode structure is shown, which uses bonding technology to convert the growth substrate into a conductive substrate with a mirror system to achieve increased brightness. In the above structure, the top electrode usually covers the conductive vias under the light-emitting epitaxial stack, so that part of the light cannot be extracted, which affects the brightness of the chip. [0004] In the prior art, in order not to overlap the top electrode and the conductive via hole below the light-emitting epita...

AI Technical Summary

Problems solved by technology

Although the technical solution disclosed in this document solves the problem of electrode occlusion on the top surface, on the one hand, electrode alignment is required, which increases the complexity of the process, and it requires high accuracy of alignment, otherwise it is easy to cause inaccurate alignment. Causes problems such as low yield rate; on the other hand, when LOP is increased, it is accompanied by V F Becomes high

Images