Integrated radiator IGBT power device with low-inductance composite busbar structure

Abstract

The invention provides an integrated radiator IGBT power device with a low-inductance composite busbar structure, which comprises a radiator, a lining plate, a PCB circuit, a terminal and a low-inductance composite busbar, the lining plate is interconnected with the radiator, the PCB circuit and the terminal are arranged on the lining plate, and the low-inductance composite busbar is connected with the terminal; the low-inductance composite busbar comprises a DC + stage of a half-bridge IGBT device, a DC - stage of the half-bridge IGBT device and an AC stage of the half-bridge IGBT device, wherein the DC + stage of the half-bridge IGBT device and the DC - stage of the half-bridge IGBT device are oppositely arranged, and the AC stage of the half-bridge IGBT device is arranged on one side of the DC + stage of the half-bridge IGBT device and the DC - stage. According to the invention, the low-inductance composite busbar is integrated, so that the IGBT device is more compact, the occupied space is small, and the contact thermal resistance and resistance of the device caused by connection can be effectively reduced; the design freedom degree of the low-inductance composite busbar is high, and parasitic parameters are small; a power assembly formed by assembling the device is large in spatial arrangement freedom degree, and parasitic parameters can also be reduced. The stray inductance is low, the current path is short, the stress borne by the chip can be effectively reduced, and the reliability of the device can be improved.

Description

technical field [0001] The invention relates to the technical field of heat dissipation, in particular to an integrated radiator IGBT power device with a low-inductance composite busbar structure. Background technique [0002] The existing IGBT module integrated power component structure is as follows figure 1 As shown, it includes: IGBT power device 1 and composite busbar 2. The figure shows that an IGBT power device 1 is fixedly connected to a composite busbar 2 by screws, and the composite busbar 2 is used in an integrated power assembly composed of 8 IGBT devices. [0003] A specific embodiment of the composite busbar is that the composite busbar is connected to internal terminals of several independent IGBT devices arranged in a regular manner through screws. The C-pole and E-pole conductive copper layers of the composite busbar are usually kept as close in shape as possible and designed as close as possible. In this way, the composite busbar realizes the function of...

AI Technical Summary

Problems solved by technology

[0006] (1) It occupies a large space. The independent IGBT modules are tiled on a plane. Considering the requirements of electrical insulation, some gaps need to be left between the modules, which will occupy a large space volume;

[0007] (2) The assembly is complicated, and the assembly process includes: first fasten each independent IGBT device on the heat dissipation plate with screws, and then fasten the composite busbar and the internal terminals of the IGBT device with screws

[0008] (3) The stray parameters are high. Because of the inevitable spatial arrangement rules, the current path of the composite busbar is longer, which leads to larger internal resistance and parasitic inductance, which is not conducive to electrical applications;

[0009] Aiming at the design shortcomings of the existing composite busbar interconnection method, the present invention proposes a new integrated radiator IGBT power device with a low-inductance composite busbar structure

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