Semiconductor platform technology

A semiconductor and process technology, applied in the field of semiconductor microelectronics design and manufacture, can solve problems such as compressing the output dynamic range of transistors, meet the requirements of microwave performance and power performance, high collector junction breakdown voltage, and overcome the problem of large parasitic capacitance. Effect
CN1794432AInactive Publication Date: 2006-06-28NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Publication Date
2006-06-28
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

This invention relates to a platform technology of semiconductors combining advantages of the plane and mesa technologies to diffuse a deep junction at the edge of the PN junction to let it have a most possible high break-over voltage and erode silicon in the width sphere of an exhaust region of the outside of said junction to form a mesa structure, which can bear rather high break-over voltage to block the further expansion of the exhaust areas and reduce the capacitance of the PN junction, so the total break-over voltage of the collector junction of the transistor is increased due to the sum voltage shared by the mesa and the PN junction.
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Description

technical field

[0001] The invention is a process technology especially suitable for the development and production of microwave power semiconductor diodes and triodes, belonging to the technical field of semiconductor microelectronics design and manufacture. Background technique

[0002] The key points and difficulties in the design and manufacture of microwave power transistors mainly include the following three aspects: 1. To overcome the adverse effects of microwave parasitic parameters and improve microwave gain performance. 2. Overcome the large injection effect in the base area, improve the power capacity, and maintain the microwave performance under high-power conditions; 3. Overcome the thermal effect brought by high-power applications, and improve the long-term reliability of the transistor.

[0003] In order to expand the output dynamic range and increase the output power of semiconductor transistors, it is required to reduce their saturation voltage drop under ra...

Claims

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