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Method for making semiconductor device including band-engineered superlattice

A semiconductor, superlattice technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc.

Active Publication Date: 2006-08-02
梅尔斯科技公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Device performance can be maintained with greater mobility despite the continual shift to smaller device sizes

Method used

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  • Method for making semiconductor device including band-engineered superlattice
  • Method for making semiconductor device including band-engineered superlattice
  • Method for making semiconductor device including band-engineered superlattice

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Embodiment Construction

[0025] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and is not construed as limited to the embodiments set forth herein. The embodiments provided herein are intended to be thorough and complete, and will convey the scope of the present invention to those skilled in the art. Like numbers refer to like elements throughout the specification, and prime notation is used to indicate like elements in alternative embodiments.

[0026] The present invention relates to controlling the properties of semiconductor materials at the atomic or molecular level to achieve improved performance within semiconductor devices. Further, the present invention relates to the identification, creation, and use of improved materials for use in the conductance paths of semiconductor devices.

[0027] Without wishing to ...

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PUM

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Abstract

A semiconductor device comprises superlattices and thereby comprises a plurality of bed sets which are stacked. Each group of superlattices can comprise a plurality of basic semiconductor mono-layers which are stacked and limit a basic semiconductor part and an energy band modification layer on the basic semiconductor part, wherein the energy band modification layer can comprise at least one non-semiconductor mono-layer which is restrained in a neighboring basic semiconductor part and thereby the superlattices can have higher carrier mobility on the parallel direction than that in other conditions.

Description

technical field [0001] The present invention relates to the field of semiconductors, and more particularly, to semiconductors with enhanced properties based on energy band engineering and related methods. Background technique [0002] Structures and techniques have been proposed to enhance the performance of semiconductor devices, such as by enhancing carrier mobility. For example, US Patent No. 2003 / 005316 to Currie et al. discloses strained material layers of silicon, silicon-germanium, and relaxed silicon, also including regions free of impurities that would otherwise cause performance degradation. The resulting biaxial strain in the upper silicon layer alters the carrier mobility, enabling higher speed and / or lower power devices. US Patent Publication No. 2003 / 0034529 to Fitzgerald et al. discloses a CMOS inverter, also based on a similar strained silicon technology. [0003] US Patent 641685 B2 to Takagi discloses a semiconductor device comprising silicon and carbon l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/15H01L29/10H01L21/8238H01L29/78
CPCH01L21/823807H01L29/1054H01L29/155H01L29/7833
Inventor 罗伯特·J.·梅尔斯吉恩·A.·C·S·F·伊普彤迈尔柯·伊萨斯科特·A.·柯瑞普斯伊利佳·杜库夫斯基
Owner 梅尔斯科技公司