Method of manufacturing a capacitor and a metal gate on a semiconductor device

Abstract

A method of manufacturing a capacitor and a metal gate on a semiconductor device comprises forming a dummy gate on a substrate, forming a trench layer on the substrate and adjacent the dummy gate, forming a capacitor trench in the trench layer, forming a bottom electrode layer in the capacitor trench, removing the dummy gate to provide a gate trench, forming a dielectric layer in the capacitor trench and the gate trench, and forming a metal layer over the dielectric layer in the capacitor trench and the gate trench.

Description

Technical field [0001] The present invention relates to a method for manufacturing a semiconductor, and particularly to a method for manufacturing a capacitor and a metal gate of a semiconductor element. Background technique [0002] In the semiconductor industry, metal-oxide semiconductor (MOS) transistors typically use polysilicon to form gate electrodes. The polysilicon material is used because of its heat-resistant properties, allowing it to be annealed at high temperatures with the source and drain regions. Furthermore, since polysilicon can block atoms doped by ion implantation from entering the channel region, self-aligned source and drain structures can be easily formed after the gate is patterned. [0003] However, polysilicon gate electrodes have some disadvantages. Compared with most metal materials, polysilicon gate electrodes are formed of semiconductor materials with much higher resistance. This causes the polysilicon gate electrode to operate at a lower rate than t...

AI Technical Summary

Problems solved by technology

But the question that arises is how to integrate capacitor fabrication in a metal gate process while achieving a cost-competitive process

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