Semiconductor device and manufacturing method thereof

Abstract

A fabrication process for semiconductor device, aimed to retard cracking in the lower surface of a silicon substrate subjected to grinding. A silicon substrate 1 is ground appropriately on the lower surface side. Consequently, fine and acute protrusions and recesses (crystal destruction layer of silicon) are formed on the lower surface of the silicon substrate 1. The lower surface of the silicon substrate 1 is then roughened with level difference of 1-5 [mu]m by wet etching. Subsequently, a protective film 12 is formed of epoxy based resin, or the like, on the lower surface of the silicon substrate 1. Since the lower surface of the silicon substrate 1 is roughened with level difference of 1-5 [mu]m, the rough surface is covered surely with the protective film 12 and cracking is retarded in the lower surface of the silicon substrate.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same. Background technique [0002] Along with the thinning of electronic equipment, the thinning of semiconductor devices is required. However, if the semiconductor substrate in the wafer state is thinned excessively, the semiconductor substrate may be damaged during a so-called semiconductor manufacturing process in which an integrated circuit is formed on the front surface of the semiconductor substrate in the wafer state. Therefore, a method of reducing the thickness of the semiconductor substrate by grinding the back surface opposite to the surface on which the integrated circuits are formed after forming integrated circuits on the front surface of a semiconductor substrate in a wafer state has been developed. Japanese Patent Laid-Open No. 2001-230224 discloses such a conventional semiconductor device manufacturing method. This previous document discloses ...

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Problems solved by technology

[0003] However, in the semiconductor device obtained by the above-mentioned conventional manufacturing method, there is the following problem: if the back surface of the semiconductor substrate is ground, a Even if a protective film made of resin is formed on the fine and acute-angled concave-convex surface, it is difficult to reliably fill the depth of the fine and acute-angled concave portion, because the depth of the fine and acute-angled concave portion is not covered. Due to the protective film covering, there is a possibility of damage to the back surface of the semiconductor substrate

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