Multi-wavelength LED structure and making process thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- TAIWAN OASIS TECH CO LTD
- Publication Date
- 2006-09-27
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to the luminous efficiency and light color performance technology of light-emitting diodes, aiming to provide a multi-wavelength light-emitting diode structure and manufacturing process capable of producing high luminous efficiency and accurate gloss. Background technique
[0002] Such as figure 1 As shown, it is a schematic diagram of the basic structure of a conventional multi-wavelength light-emitting diode. This multi-wavelength light-emitting diode uses a die-bonding glue 40 to fix the light-emitting chip 10 in a bowl-shaped carrier 20, and uses gold wires 30 to form a light emitting diode. The chip 10 is connected to the electrode terminal 21, and the light-emitting chip 10 is coated with the fluorescent glue 50 having phosphor powder, so that the light source of the light-emitting chip excites the phosphor powder of the fluorescent glue 50 under the power-on action of the light-emitting chip 10, so as to form the desired l...