Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same
A technology of polysilicon thin film and manufacturing method, which is applied in the field of manufacturing TFT with the thin film, polysilicon thin film with electrical characteristics, and thin film transistor with the thin film, which can solve the problems of leakage current and unreliable bonding, etc., and achieve the increase of crystal Particle size, effect of improving electrical characteristics
Active Publication Date: 2010-04-07
SAMSUNG DISPLAY CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
[0006] However, in the off state, leakage current flows through the interface between the polysilicon grains
That is, silicon atoms at the interface are not reliably bonded to each other, resulting in the formation of electron holes at the interface, resulting in a leakage current
Method used
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[0027] The present invention is described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.
[0028] It will be understood that when an element or layer is referred to as being "on," "connected to," or "coupled to" another element or layer, it can be directly on the other element or layer, or Directly connected or coupled thereto, or intervening elements or layers may also be present. In contrast, when an element is referred to as being "directly on," "directly connected to" or "directly coupled to" anothe...
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Abstract
In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy theportion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.
Description
technical field [0001] The present invention relates to a method of manufacturing a polysilicon thin film and a method of manufacturing a thin film transistor (TFT) having the thin film. More particularly, the present invention relates to a method of manufacturing a polysilicon thin film having improved electrical characteristics and a method of manufacturing a TFT having the thin film. Background technique [0002] A liquid crystal display (LCD) device includes switching elements. The switching element includes an amorphous silicon thin film transistor (a-Si TFT) or a polysilicon thin film transistor (Poly-Si TFT). An LCD device with Poly-Si TFTs has a faster operating speed than an LCD device with a-Si TFTs, thereby providing better image display quality than an LCD device with a-Si TFTs. [0003] Poly-Si TFTs are directly formed on the substrate, or an amorphous silicon thin film is crystallized by heat treatment to form Poly-Si TFTs. [0004] When the temperature of a...
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IPC IPC(8): H01L21/00H01L21/20H01L21/268H01L21/324H01L21/336B23K26/00C30B28/00
CPCB23K26/354G02F1/1368
Inventor 郑世镇金治宇郑义振金东范
Owner SAMSUNG DISPLAY CO LTD