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Photomask

A photomask and mask substrate technology, applied in the field of photomasks, can solve problems such as inability to determine defocusing

Inactive Publication Date: 2006-11-01
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this regard, there is no way to determine the amount of defocus without an adequate method of measuring best focus

Method used

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Examples

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Embodiment Construction

[0047] Exemplary photomask structures and methods for improving the photolithographic process window and enabling focus detection for fabricating such devices according to exemplary embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. It should be understood that the drawings are schematic representations only, wherein the thicknesses and dimensions of various elements, layers and regions are not to scale but are exaggerated for clarity. It will also be understood that when a layer is referred to herein as being "on" or "over" another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. It is also to be understood that like reference numbers are used throughout the figures to designate identical or similar elements or elements having identical or similar functions.

[0048] Figure 5A with 5B A photomask according to an exemplary embodiment of the p...

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Abstract

Photolithographic methods for semiconductor manufacturing are provided wherein photomask structures are designed to provide increased lithographic process windows for printing sub-wavelength features. In one aspect, a photomask includes a mask substrate transparent to exposure light of a given wavelength, and a mask pattern formed on a surface of the substrate. The mask pattern comprises a printable element defined by a first and second critical edge, wherein the printable element includes an inner, non-printing feature formed between the first and second critical edges. The inner, non-printing feature is adapted to enhance image contrast at the first and second critical edges of the printable element for the given wavelength of exposure light during a photolithographic process. The non-printing feature comprises a space feature that exposes a region of the mask substrate aligned to the printable element between the first and second critical edges, and a trench feature that is formed in the mask substrate and aligned to the space feature.

Description

technical field [0001] The present invention generally relates to improved photolithographic methods for semiconductor fabrication. In particular, the present invention relates to photomask structures that provide an increased photolithographic process window for printing sub-wavelength features. Background technique [0002] Photolithography is an essential process in the manufacture of semiconductor IC (Integrated Circuit) devices. Typically, the photolithography process involves coating a semiconductor wafer (or substrate) with a layer of photoresist and exposing it with an actinic light source (such as an excimer laser, mercury lamp, etc.) through a photomask bearing the image of the integrated circuit photoresist. For example, a photolithographic tool such as a deep UV stepper can be used to project light onto a photoresist layer through a photomask and a high-aperture lens, where the intensity of the light imprints the photomask pattern onto the photoresist layer. o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/26G03F1/38G03F1/42G03F7/20H01L21/027
Inventor 金淏哲
Owner SAMSUNG ELECTRONICS CO LTD
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