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Electrostatic discharge protection circuit of power chip

An electrostatic discharge protection and electrostatic discharge technology, which is applied to emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, circuits, etc., can solve the problem of small leakage current, slow response speed, and low cross voltage. question

Inactive Publication Date: 2006-11-15
LEADTREND TECH
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  • Summary
  • Abstract
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AI Technical Summary

Problems solved by technology

[0004] Due to the relatively high voltage potential input by the power chip 10, the transistors used in the existing electrostatic discharge protection circuit 18 use field effect transistors (Field Effect Transistor, FET), including: junction field effect transistors (JFET) and metal oxide Semiconductor Field Effect Transistor (MOSFET), which has the advantages of small leakage current, small size, and low component power consumption. low, thus unable to meet the requirements of the power chip 10 for fast response and high cross-voltage (the cross-voltage from the signal input and output terminal 14 to the ground terminal)

Method used

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  • Electrostatic discharge protection circuit of power chip
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  • Electrostatic discharge protection circuit of power chip

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Embodiment Construction

[0033] In order to enable your examiners to further understand the technical content of the present invention, five preferred embodiments are listed as follows. Since the bipolar junction transistor (BJT) can withstand a higher voltage drop and a larger output current, and provide a faster response speed to provide a fast current output path, the existing electrostatic discharge protection circuit 18 can be avoided. Therefore, the internal circuit of the electrostatic discharge protection circuit 18 of the present invention uses at least one bipolar junction transistor.

[0034] Such as figure 2 As shown, the electrostatic discharge protection circuit 181 of the first embodiment of the present invention includes: NPN bipolar junction transistors 30, 31 and a first conduction circuit 187, wherein the collector of the NPN bipolar junction transistor 30 (Collector ) is connected to the signal input / output terminal 14, the bases (Base) of the NPN bipolar junction transistors 30 ...

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Abstract

This invention discloses electrostatic discharge prevention circuit of power chip. It is run according to the indication of the electrostatic discharge detect circuit. When the detecting circuit output enable signal to the prevention circuit, the prevention circuit provides short circuit path for electrostatic discharging in order to protect inner circuit of the chip from unexpectant damaging by static electricity of high voltage or high current.

Description

technical field [0001] The invention relates to an electrostatic discharge protection circuit, in particular to an electrostatic discharge protection circuit suitable for power chips. Background technique [0002] The friction between any two objects of different materials may generate static electricity. When the object with static electricity touches the metal pin of the power chip, the instantaneous high-voltage discharge will be discharged through the metal pin. Damage to the internal circuit of the power chip is the damage caused by the so-called ElectroStatic Discharge (ESD). The power chip is equipped with an ESD protection circuit, and its main function is to provide an appropriate discharge path to prevent damage caused by ESD before ESD causes damage to the internal circuit when ESD occurs. In addition, the ESD protection circuit must only start to operate when ESD occurs, otherwise the input signal of the power chip will also be removed, and the input signal will...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/60H02H9/00
CPCH01L2924/0002
Inventor 李祈祥
Owner LEADTREND TECH
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