Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Strong magnetic filed Hall effect testing apparatus and testing method thereof

A Hall effect and testing device technology, applied in the field of testing, can solve the problems of error-prone, low efficiency and poor reliability of manual data processing, etc.

Inactive Publication Date: 2006-12-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF0 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, manual adjustment of current calculation data is usually used, which often produces human errors and a series of problems: (1) manual reading and adjustment of current have obvious errors, and the accuracy is difficult to guarantee; (2) manual control of polarity conversion is prone to errors; (3) ) Manual data processing has poor reliability and low efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Strong magnetic filed Hall effect testing apparatus and testing method thereof
  • Strong magnetic filed Hall effect testing apparatus and testing method thereof
  • Strong magnetic filed Hall effect testing apparatus and testing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Depend on figure 1 It can be seen that the Hall effect testing device of a kind of strong magnetic field of the present invention consists of epitaxial wafer 1, electromagnet group 2, constant current source 3, polarity control circuit 4, controllable voltage regulator source 5, measurement circuit 6, Computer 7, three-phase alternating current 8, temperature control device 9 etc. are connected to form. Concrete line connection: the output control line of the computer 7 is connected with the polarity control circuit 4 and the controllable voltage source 5 respectively; the output line of the measurement circuit 6 is connected with the input control line of the computer 7; the output line of the constant current source 3 is connected with the pole The input line of polarity control circuit 4 is connected; the input and output lines of epitaxial wafer 1 are respectively connected with the output and input control lines of polarity control circuit 4; the output line of co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a Hall-effect tester of strong magnetic field, wherein said device is formed by extending sheet, electromagnet group, constant-current source, polarity control circuit, controllable stable voltage source, testing circuit, computer, three-phase alternative-current source, and temperature controller. And said testing method comprises: (1), making the extending sheet into electrode, and connecting the wires; (2), connecting three-phase alternative-current source, operating the computer control program, based on the program demand, inputting each parameter; (3), testing relative parameters in new balance temperature, when changing the sample condition temperature; (4), storing or printing the measure result.

Description

technical field [0001] The invention relates to the technical field of testing, in particular to a high magnetic field Hall effect testing device and a testing method thereof. Background technique [0002] Hall effect test is a basic test method in the field of semiconductor material research, which can measure many properties of semiconductor epitaxial films, such as conductivity type, resistivity, sheet resistance, carrier concentration, mobility, etc. of semiconductor materials. For wide-bandgap semiconductor materials, p-type doping has always been a major difficulty in their wide application. Unintentionally doped wide-bandgap materials usually exhibit n-type due to the vacancies of wide-bandgap semiconductor materials and the like. Therefore, in order to obtain P-type materials, heavy doping must be carried out, so that the apparent hole concentration greatly exceeds the electron concentration, and the n-type carriers formed by vacancies and other reasons are recombin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R31/26G01R33/00
Inventor 张攀峰吴洁君胡卫国刘祥林
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com