Thin film transistor, display, liquid crystal display, and method of manufacturing them
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SEMICON ENERGY LAB CO LTD
- Publication Date
- 2007-01-03
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to methods of fabricating wiring, thin film transistors, and display devices, each employing a method whereby patterns can be selectively formed. More specifically, the present invention relates to a display device having components such as transistors formed on a large glass substrate using a droplet discharge method typically an inkjet method as a method capable of selectively forming patterns. The active element, the invention also relates to a manufacturing method of a display device. Furthermore, the present invention relates to a wiring, a thin film transistor, and a display device formed by a method capable of selectively forming patterns. Background technique
[0002] By patterning various thin films using an exposure process using a photomask and a manufacturing technique of a semiconductor integrated circuit, so-called thin film transistors (hereinafter also referred to as "TFTs") on a glass substrate have been ...