Semiconductor wafer processing method and edge-wafer residue removal system

Abstract

The invention provides a semiconductor wafer processing method and a crystal edge residue removal system. The bezel residue removal system for use with a wet immersion lithography process includes: a multi-speed motor for rotating a wafer chuck capable of maintaining the chuck at a first speed greater than 1500 rpm and a second speed between approximately 1500 rpm between and 1000rpm, and the third rotation speed is less than 1000rpm; and a first nozzle is configured on the suction cup, close to the edge of the wafer on the suction cup, and the first nozzle is used for spraying solvent. The processing method of the semiconductor wafer and the crystal edge residue removal system of the present invention have avoided the contamination of the exposure liquid and the lens due to the contact of the photoresist residue with the immersion exposure liquid and the lens, and also avoided the exposure of the photoresist. Contaminated during exposure and reduces defects formed on the wafer.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor device, in particular to a method and system for removing photoresist residues on a semiconductor substrate. Background technique [0002] Photolithography is the technique of projecting a pattern on a mask onto a substrate such as a semiconductor wafer. In the field of semiconductor lithography technology, it is necessary to minimize the feature size of the pattern on the semiconductor wafer under the resolution limit or critical dimension, and the current critical dimension has reached below 65nm. [0003] Immersion lithography (immersion lithography) is a new technology in photolithography, which fills liquid between the surface of the wafer and the lens to perform the exposure step. Using wet immersion lithography allows lenses to have higher apertures than when used in air, improving resolution. In addition, wet dipping can increase the depth-of-focus (DOF) to produce sma...

AI Technical Summary

Problems solved by technology

[0004] The wet immersion exposure step can use deionized water or other suitable wet immersion exposure liquid between the wafer and the lens. Although the exposure time is very short, the contact of the liquid with the photosensitive layer (such as photoresist) will cause Issues such as photoresist residues coming into contact with the immersion exposure fluid and / or lens, thereby contaminating the immersion exposure fluid and / or lens and causing defects on the wafer

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