Ion beam apparatus

Abstract

An ion beam apparatus comprises an ion source 2 which extracts an ion beam 4, a mass separation electromagnet 6 which separates an ion beam 4 of desired mass from the ion beam 4 extracted from the ion source, a scanner 12 which scans the injected ion beam 4 with a given scan center as center within a given scan surface, an electrostatic deflector which deflects the ion beam through 90 DEG so that an ion beam of desired energy in said ion beam travels in a direction perpendicular to said scan surface within a circular-arc-shaped deflection zone centered on the scan center, and a scanning mechanism 54 which retains a target 50 and which mechanically, reciprocally moves the target 54 in a direction in which the target crosses the ion beam passed from the electrostatic deflector 30 at a given angle.

Description

technical field [0001] The present invention relates to an ion implantation apparatus for performing ion implantation by irradiating an ion beam onto a target, and to an ion beam constituting the ion implantation apparatus and including an ion beam deflector for scanning and deflecting an ion beam device. Specifically, the present invention relates to an ion beam device capable of shortening the length of an ion beam streamline. Background technique [0002] In ion beam devices (hereinafter, ion implantation devices are exemplified) such as ion implantation devices, ion beam parallelism has hitherto been achieved so that the incident angles of ion beams within a target plane (eg, semiconductor substrate) are uniform. [0003] In order to prevent ions of undesired energy (called "energy contamination" or "energy contamination") from being injected into the target with the required energy (this injection is called "energy contamination" or "energy contamination"), Ions of un...

AI Technical Summary

Problems solved by technology

In any case, there is still the problem of increased beamline length

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