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Semiconductor structure and method of forming photoresist pattern and pattern of semiconductor device using the same structure

A semiconductor and graphics technology, applied in semiconductor/solid-state device manufacturing, microlithography exposure equipment, photolithography process of patterned surface, etc., can solve the problem of sensitive reflectivity of the second mask layer thickness change, etc.

Inactive Publication Date: 2007-05-30
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the three-layer multi-BARC structure is disadvantageous in that it is sensitive to the thickness variation of the second mask layer and has a high reflectivity

Method used

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  • Semiconductor structure and method of forming photoresist pattern and pattern of semiconductor device using the same structure
  • Semiconductor structure and method of forming photoresist pattern and pattern of semiconductor device using the same structure
  • Semiconductor structure and method of forming photoresist pattern and pattern of semiconductor device using the same structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] Fig. 8 illustrates the reflectivity curve of the BARC / PR interface according to the first embodiment of the present invention as a function of the thickness of the second mask layer, and the profile photograph of the corresponding PR pattern close to the second minimum reflectivity thickness.

[0072] In the first embodiment, the second mask layer has properties of n=1.6 and k=0.1, and the first mask layer is an ACL with properties of n=1.0272 and k=0.5182. As can be seen from Figure 8, the reflectivity of the BARC / PR interface is stable with about 1%, close to the thickness of the second mask layer of 0.1 μm, that is, the second minimum reflectivity thickness, and the profile of the PR pattern Virtually unaffected by thickness variations and has a relatively strong light base structure that resists pattern collapse. At this time, the second mask layer has a silicon weight percentage of 30% or more, and a carbon weight percentage of 80% or more. Meanwhile, the first ma...

Embodiment 2

[0074] Fig. 9 illustrates the curve of the reflectivity of the BARC / PR interface according to the first embodiment of the present invention depending on the thickness of the second mask layer, and the profile photograph of the corresponding PR pattern at the second minimum reflectivity thickness.

[0075] In a second embodiment, the second mask layer has properties of n=1.6 and k=0.1. However, the first mask layer is an SOC layer with properties of n=1.46 and k=0.6. The thickness and carbon weight percentage of the first mask layer are the same as the first embodiment. Figure 9 shows that the profile of the PR pattern is hardly affected by the thickness variation and has a strong slight pedestal structure that prevents the pattern from collapsing, and the second minimum reflectivity of the second mask layer and the peripheral The reflectance is 1% or less.

Embodiment 3

[0077] 10A to 10G are graphs illustrating the reflectivity of the BARC / PR interface and the thickness of the second mask layer of the multiple BARC structure applied to the present invention when the refractive index and absorptivity of the second mask layer are varied. The third embodiment.

[0078] In the third embodiment, the first mask layer is an SOC layer of n=1.5 and k=0.29, and may have a thickness of 0.1 to 1 μm. Each graph illustrates values ​​corresponding to a case where the refractive index of the second mask layer increases by 0.1 from 1.5 to 1.75. Each curve also represents the absorbance corresponding to a 0.05 increase in reflectance from 0.00 to 0.30. 10A and 10B illustrate that a part may have a reflectivity exceeding 2% and that the reflectivity varies significantly according to the thickness variation of the silicon layer. This situation is not optimal for this embodiment. FIGS. 10C to 10F illustrate cases where the refractive index is relatively stable...

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Abstract

The semiconductor structure includes an etch target layer to be pattemed, a multiple bottom anti-reflective coating (BARC) layer, and a photoresist (PR) pattern. The multiple BARC layer includes a first mask layer formed on the etch target layer and containing carbon, and a second mask layer formed on the first mask layer and containing silicon. A PR layer formed on the multiple BARC layer undergoes photolithography to form the PR pattern on the multiple BARC layer. The multiple BARC layer has a reflectance of 2% or less, and an interface angle between the PR pattern and the multiple BARC layer is 80 DEG to 90 DEG .

Description

technical field [0001] The present invention generally relates to semiconductor devices and methods of manufacturing the same, and more particularly, the present invention relates to hard masks of multiple bottom anti-reflective coatings (BARC) for forming fine patterns of semiconductor devices and manufacturing semiconductor devices by using the multiple BARC layers Methods. [0002] Priority is claimed from Korean Patent Application No. 10-2005-0070028 filed with the Korean Intellectual Property Office on Jul. 30, 2005, the disclosure of which is hereby incorporated by reference in its entirety. Background technique [0003] In a semiconductor device manufacturing process, in order to pattern a material layer on a wafer, a patterning process is performed. Typically, the patterning process sequentially includes photoresist (PR) coating, exposure, and development. Patterning process resolution is the most important factor for obtaining fine patterns, and mainly depends on ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20H01L21/00
CPCH01L21/0276H01L21/31144H01L21/32139G03F7/091H01L21/0273
Inventor 夏政焕蔡允淑赵汉九姜昌珍禹相均柳万馨丁荣载
Owner SAMSUNG ELECTRONICS CO LTD