Film formation apparatus and method of using the same

Abstract

The invention provides a method of using a film formation apparatus for semiconductor processing, the method compises a process of removing an outgrowth film adhered on an inner face of a reaction chamber of the film formation apparatus by washing gas, and a process of chymic planarization of the inner face of the reaction chamber by planarized gas. The the inner face of the reaction chamber contains a material selected from quartz and carborundum as a main component. The removing process sets the inside of the reaction chamber to a first temperature and a first pressure for activation of the washing gas while supplying the washing gas into the reaction chamber. The planarization process sets the inside of the reaction chamber to a second temperature and a second pressure for activation of the planarized gas while supplying the planarized gas into the reaction chamber. The planarized gas includes fluorine and hydrogen.

Description

[0001] Cross-applications relevant to this application [0002] This invention is based on Japanese Patent Application No. 2005-338438 filed on November 24, 2005 and Japanese Patent Application No. 2006-279768 filed on October 13, 2006, both of which are referred to in this application Content. technical field [0003] The present invention relates to a film forming apparatus for semiconductor processing for forming a film on a substrate to be processed such as a semiconductor wafer, and a method of using the apparatus. Here, semiconductor processing refers to forming a semiconductor wafer in a predetermined pattern on a substrate to be processed such as a semiconductor wafer and a glass substrate for an FPD (Flat Panel Display) such as an LCD (Liquid Crystal Display: Liquid Crystal Display). Layers, insulating layers, conductive layers, etc., and various processes are performed to manufacture structures including semiconductor devices and wiring and electrodes connected to s...

AI Technical Summary

Problems solved by technology

However, as will be described later, the inventors of the present invention found that after cleaning the inside of the reaction tube, the film formation process may cause problems such as a decrease in the film formation rate (deposition rate) or particle contamination of the product film.

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