Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Organic bistable element and its manufacturing method

A manufacturing method and bistable technology, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems affecting component life, multi-stable layer damage, limited application level, etc., to improve life, Effect of increasing write/erase times

Inactive Publication Date: 2007-05-30
IND TECH RES INST
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

General multi-stable devices only have a multi-stable layer of a single material, and when the endurance test is carried out with this device structure, the number of writing / erasing is only 70 times, and the electrical performance is not stable
As a result, the application level of this multi-stable component is quite limited
And during the operation of the multistable element with only a single multistable material, when a bias voltage is applied across the multistable element, the multistable layer will be subjected to excessive stress due to the action of the electric field , so that the material of the multi-stable layer is damaged, further affecting the life of the component

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic bistable element and its manufacturing method
  • Organic bistable element and its manufacturing method
  • Organic bistable element and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] 1A to 1C are cross-sectional views of a method for manufacturing an organic bistable device according to a preferred embodiment of the present invention.

[0051] Referring to FIG. 1A , a substrate 100 is provided. A first metal layer 102 is formed on the substrate 100 . The material of the first metal layer 102 is copper, gold, silver, aluminum, cobalt or nickel, and the thickness of the first metal layer 102 is about 700 angstroms. Afterwards, a buffer layer 104 is formed on the first metal layer 102 . Wherein the buffer layer 104 is formed by, for example, a material with a high dielectric constant, and the material with a high dielectric constant is preferably Al 2 o X , LiF, MgO, V 2 o 5 or TiO 2 . Also, the thickness of the buffer layer 104 is about 40 angstroms.

[0052]Next, please refer to FIG. 1B , an organic mixed layer 106 is formed on the buffer layer 104 . Wherein, the method for forming the organic mixed layer 106 includes performing a jet printi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

This invention relates to organic double stable elements, which comprises first electrode, second one and organic mixture layer, wherein, the mixture layer is between first and second electrodes; when the parts first and second electrodes are exerted with bias voltages through metal particle in organic mixture layer as electron injection medium to improve the write or eradiation times to improve the parts use life; the parts have stable elements for high resistance status property not opened.

Description

technical field [0001] The invention relates to a memory element and its manufacturing method, and in particular to an organic multi-stable element and its manufacturing method. Background technique [0002] In recent years, a bistable element that can switch between a high-resistance state and a low-resistance state depending on the applied voltage has been used in the manufacture of memory elements and switches. Materials with such switching properties and memory storage capabilities include inorganic materials and organic materials. It is worth noting that the multi-stable memory element manufactured by disposing these materials between two electrodes has the potential to become a new generation of non-volatile memory elements. [0003] For general memory devices and switches, the lifetime of the device is a very important technical index, and the measurement technique for evaluating the lifetime of the device is endurance test (endurence), that is, write / erase test. A ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
Inventor 宋兆峯胡纪平
Owner IND TECH RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com