Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for shaping bar array large power semiconductor laser device added with guide light

A semiconductor and laser technology, applied in the field of LD, to achieve the effect of compact and reasonable optical path design, precise control, and ensure the stability of the optical path

Inactive Publication Date: 2007-06-06
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
View PDF1 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, no guide light is introduced into this optical path

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for shaping bar array large power semiconductor laser device added with guide light
  • Method for shaping bar array large power semiconductor laser device added with guide light
  • Method for shaping bar array large power semiconductor laser device added with guide light

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Example 1, using a domestic 40W continuous wave LD with a wavelength of 808nm and a 10mW light source with a wavelength of 650nm, through the above optical path for design, processing and assembly, coupled to an optical fiber with a core diameter of 400 μm and a numerical aperture of 0.37, the final output power is LD output power of 28.2 watts , the guided light output is 5.2 milliwatts, and the specific process is as follows:

[0039] (1) For an optical fiber with a core diameter of 400 μm and a numerical aperture of 0.37, it is calculated by formula (2) that the principle of optical parameter product matching can be satisfied by folding the LD beam three times. Therefore, it is necessary to make a 3-fold reflective device in this system.

[0040] (2) Realize the alignment of LD(λ 1 =808nm) collimation, the collimated light beam becomes a quasi-parallel light beam. After testing, the divergence angle in the fast axis direction is 10.2mrad, the spot length is 0.6mm, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Adding guided light strip array high-power semiconductor laser device (High-Power Laser Diode Bar , LD for short) reshaping method: (1) by calculating the product of the optical fiber core radius and half of the angular aperture, and the optical parameter product of the LD light beam in the direction of quick, slow axis, ascertain the number of times which the LD light beam needed to reshaping, to make reshaping implement with high reflecting efficiency; (2) adopting the quick, slow axis collimation lens array to collimates in two direction of the quick, slow axis alignment of LD, getting the strip collimation facula; (3) assembling reshaping implement , realizes reshaping of the light beam; (4) assembling the focusing lens and optical fiber, adjusting the optical fiber to the right location , making the outputting power of LD maximal;(5)entrancing the guided light in proper location of the reshaping implement, adjusting the guided light to appropriate location, makes the luminous power of the guided light which is output from the optical fiber maximum. The light path design is reasonable and compact, has not changed the light path of LD, has avoided leading into new scattering and reflecting loss, guarantee light path stability of LD.

Description

technical field [0001] The invention relates to a beam shaping method of a high-power semiconductor laser (High-Power Laser Diode Bar, LD for short), in particular to a shaping method of an LD with guiding light added. Background technique [0002] The optical parameter product is an important parameter of the beam. According to the ISO standard, the optical parameter product (Q) is defined as the product of the beam waist radius and half of the far-field divergence angle: [0003] Q=ω 0 θ 0 / 2 = const. (1) [0004] According to ISO regulations, the standard unit of optical parameter product is mm mrad. [0005] According to Siegman's theory, when a beam with a certain beam waist and divergence angle is transformed by an ideal optical element (such as a lens and a mirror) that is passive, not truncated, and has no aberrations, the optical parameter product Q before and after transformation will remain unchanged. This theory is also applicable in LD beam transformation s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02B27/14G02B27/00G02B6/32G02B6/26
Inventor 谢伟民周崇喜杜春雷杨欢潘丽战盛龙
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com