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Through hole processing method in copper interconnection technology Damascus manufacturing process

A processing method and manufacturing process technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting the characteristics of low dielectric constant of insulating materials, material damage, etc., and achieve the goal of improving electrical performance and reducing damage Effect

Inactive Publication Date: 2007-06-27
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the introduction of low dielectric materials, dry etching technology will undoubtedly cause material damage, which will affect the low dielectric constant characteristics of insulating materials, which has always been a problem that plagues the industry.

Method used

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  • Through hole processing method in copper interconnection technology Damascus manufacturing process
  • Through hole processing method in copper interconnection technology Damascus manufacturing process

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Experimental program
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Effect test

Embodiment Construction

[0031] A damascene manufacturing process for copper interconnection technology, comprising the steps of:

[0032] a. Depositing an insulating dielectric layer with a Damascus structure;

[0033] Please refer to FIG. 1, in the insulating dielectric layer deposited by the present invention, the bottom etching stop layer 3 has a thickness of 50 nanometers, the metal insulating layer 1 has a thickness of 900 nanometers, and the top insulating layer 2 has a thickness of 50 nanometers.

[0034] b. Using photolithography, etching, and cleaning processes to obtain Damascus through holes;

[0035] c. The through-hole filling material soluble in the developer is coated 1 to 3 times and baked 1 to 3 times to fill the through hole and complete the filling of the through hole of damascene;

[0036]The through-hole filling material is a material soluble in the developer. In this embodiment, the through-hole filling material is a mixed material including A, B, C, and D, wherein A is a keton...

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Abstract

This invention discloses a through hole process system in the Damascus production of a copper interlinkage technology, which utilizes through hole filling materials dissolved in developer to coat and bake for 1-3 times to realize the Damascus through hole filling of the copper interlinkage technology, then removes the filling material on the surface of the medium membrane by 1-3 times of development, finally finishes the Damascus patterns through photoetching, etching and cleaning.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing technology, and in particular relates to a through-hole processing method in the copper interconnection technology damascene manufacturing technology, which is suitable for deep submicron / micron integrated circuit manufacturing technology. Background technique [0002] With the continuous improvement of integrated circuit manufacturing technology, the volume of semiconductor devices is becoming smaller and smaller, which makes the parasitic capacitance between metals more and more large. For microprocessors, the chip speed is mainly limited by the resistance and Parasitic capacitance is produced. As a result, problems such as resistance-capacitance time delay, mutual interference between signals, and energy loss have become increasingly prominent. In order to solve the problem of resistance-capacitance time delay, the industry has been using low-dielectric materials (diele...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 朱骏
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT