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Multi-terminal chalcogenide switching devices

A chalcogenide and terminal technology, which is applied in superconductivity devices, volume negative resistance effect devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of cost impurity and process pollution increase, computer limitation and heavy load, etc.

Active Publication Date: 2007-07-04
ENERGY CONVERSION DEVICES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This cost increases as devices become smaller and more sensitive to impurities and process contamination
[0006] second, the growing recognition that silicon-based computers are inherently limited in capabilities, since modern computers remain largely inaccessible to certain calculations
Similarly, many tasks that are easily and intuitively performed by humans and other biological organisms are difficult, onerous, and often impossible to perform with conventional computers
[0007] Considering the future of computing reveals the need for new computers with new capabilities to solve more complex applications

Method used

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  • Multi-terminal chalcogenide switching devices
  • Multi-terminal chalcogenide switching devices
  • Multi-terminal chalcogenide switching devices

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0041] An example of a device structure according to the present invention is shown in FIG. 3 . Figure 3 shows a cross-sectional view of a three-terminal device structure. The three terminals are labeled T(1), T(2), and T(3). A plurality of these devices are formed on a 6" silicon wafer. The devices and layers on the wafer are formed using conventional sputtering, chemical vapor deposition, etching, and lithographic techniques. The structure includes a silicon wafer substrate 10, thermally oxidized layer 20, a bottom electrode 30 comprising a conductive layer 40 and a carbon barrier layer 50 formed of TiW or a combination of Ti and TiN, SiO X / SiN XThe isolation region 60 , the control electrode 70 formed of TiW, the chalcogenide material 80 , the upper electrode 90 including the carbon barrier layer 100 and the conductive layer 110 including Ti and TiN, and the Al layer 120 . In this example, the chalcogenide material 80 is Ge 2 Te 2 Sb 5 , and is labeled GST in Figure ...

example 2

[0043] In this example, several test results for the characteristics of the three-terminal device structure shown in FIG. 3 are described. Several different devices randomly selected from among the devices formed on the wafer were tested. Figure 4 summarizes the results of some tests performed by the inventors. Figure 4 shows the first quadrant of the I-V diagram for a three-terminal device of the present invention. The current I corresponds to the current passed between the load (top) and reference (bottom) electrodes of the structure, and the voltage V corresponds to the voltage applied between the load and reference electrodes. The I-V relationship between the load and the reference electrode was determined for several different control voltages applied to the control electrode. In the test, a control voltage of constant magnitude was applied to the control terminals, and the current between the load and the reference electrode was measured as a function of the voltage ap...

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Abstract

Multi-terminal electronic switching devices comprising a chalcogenide material switchable between a resistive state and a conductive state. The devices include a first terminal, a second terminal and a control terminal. Application of a control signal to the control terminal modulates the conductivity of the chalcogenide material between the first and second terminals and / or the threshold voltage required to switch the chalcogenide material between the first and second terminals from a resistive state to a conductive state. The devices may be used as interconnection devices or signal providing devices in circuits and networks.

Description

field of invention [0001] The present invention generally relates to electronic switching devices. More specifically, the present invention relates to chalcogenide switching devices. Still more particularly, the present invention relates to multi-terminal switching devices in which a control signal applied at a control terminal adjusts the threshold voltage and / or conductivity of a chalcogenide material between non-control terminals. Background of the invention [0002] Today's electronic devices rely on traditional silicon technology. Silicon technology enables the manufacture of electronic devices such as transistors, diodes, switches, memory, integrated circuits and processors, which are required to make modern computers and home electronics. Silicon-based electronics have achieved remarkable market success and offer a variety of conveniences that greatly simplify everyday life. [0003] The development of silicon-based electronics over the past few decades has brought...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L47/00H01L45/00H01L39/00H10N80/00H10N60/00
CPCH01L45/1206H01L45/06H01L45/144G11C2213/51H01L45/04H01L45/1213H01L45/1233H10N70/253H10N70/257H10N70/231H10N70/20H10N70/826H10N70/8828H01L21/18
Inventor S·R·奥欣斯基B·帕斯马科夫
Owner ENERGY CONVERSION DEVICES INC