Endpoint compensation in electroprocessing
Patent Information
- Authority / Receiving Office
- US ยท United States
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Publication Date
- 2005-03-24
- Estimated Expiration
- Not applicable ยท inactive patent
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Abstract
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention generally relates to polishing, planarization, plating and combinations thereof. More particularly, the invention relates to the monitoring and control of electro-processing, polishing and plating. 2. Description of the Related Art Sub-quarter micron multi-level metallization is one of the key technologies for the next generation of ultra large-scale integration (ULSI). The multilevel interconnects that lie at the heart of this technology require planarization of interconnect features formed in high aspect ratio apertures, including contacts, vias, trenches and other features. Reliable formation of these interconnect features is very important to the success of ULSI and to the continued effort to increase circuit density and quality on individual wafers and die. In the fabrication of integrated circuits and other electronic devices, multiple layers of conducting, semiconducting, and dielectric materials...