Multiplexed pixel column architecture for imagers

a multi-pixel column and imager technology, applied in the field of imaging devices, can solve the problems of increasing the frequency of the switching in the readout path, increasing the readout noise of imagers, and more power consumption than desired, so as to reduce the noise and power consumption of readouts, simplify the column select circuitry, and speed up the readout speed

Inactive Publication Date: 2005-03-24
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0028] The present invention also provides a column multiplexing scheme for an imager that produces faster readout speeds and lowers readout noise and power consumption.
[0029] The above and other features and advantages are achieved in various embodiments of the invention by providing an imager with a multiplexer located at the pixel output line connected to associated column sample and hold circuitry. The multiplexer ensures that signals from pixels within a column are output to the correct output channels in the readout path. By having the multiplexer at the pixel output line, before any sample and hold circuitry, the imager can use simplified column select circuitry when signals are being read out to the output channels. As such, parasitic capacitance at the readout path is reduced, which produces faster readout speeds than typical imagers. In addition, the imager achieves lower readout noise and less power consumption than typical imagers.

Problems solved by technology

This problem gets worse as the frequency of the switching in the readout path is increased.
The imager 10 also experiences higher readout noise and more power consumption than desired.
This increases the overall readout noise since part of the readout noise is inversely proportional to the feedback factor.
It may be possible to increase the feedback capacitor of the amplifier to improve its feedback factor, but this would cause a much higher power consumption and is also undesirable.

Method used

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Embodiment Construction

[0037] In the following detailed description, reference is made to the accompanying drawings, which are a part of the specification, and in which is shown by way of illustration various embodiments whereby the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to make and use the invention. It is to be understood that other embodiments may be utilized, and that structural, logical, and electrical changes, as well as changes in the materials used, may be made without departing from the spirit and scope of the present invention.

[0038] Now referring to the figures, where like reference numbers designate like elements, FIG. 4 shows a CMOS imager 110 constructed in accordance with a first exemplary embodiment of the invention. The imager 110 includes a pixel array 20, column decoder 118, column S / H circuitry 130 and a multiplexer 180. The imager 110 has two output channels Chg, Chrb. The first channel Chg includes two outp...

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Abstract

An imager with a multiplexer located at the pixel output line connected to associated column sample and hold circuitry. The multiplexer ensures that signals from pixels within a column are output to the correct output channels in the readout path. By having the multiplexer at the pixel output line, before any sample and hold circuitry, the imager can use simplified column select circuitry when signals are being read out to the output channels. As such, parasitic capacitance at the readout path is reduced, which produces faster readout speeds than typical imagers. In addition, the imager achieves lower readout noise and less power consumption than typical imagers.

Description

FIELD OF THE INVENTION [0001] The invention relates generally to imaging devices, and more particularly to an imager with a multiplexed pixel column architecture. BACKGROUND [0002] Imaging devices such as complementary metal oxide semiconductor (CMOS) imagers are commonly used in photo-imaging applications. [0003] A CMOS imager circuit includes a focal plane array of pixel cells, each one of the cells including either a photogate, photoconductor or a photodiode overlying a substrate for accumulating photo-generated charge in the underlying portion of the substrate. A readout circuit is connected to each pixel cell and includes at least an output field effect transistor formed in the substrate and a charge transfer section formed on the substrate adjacent the photogate, photoconductor or photodiode having a sensing node, typically a floating diffusion node, connected to the gate of an output transistor. The imager may include at least one electronic device such as a transistor for tr...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H04N5/357H04N5/374H04N5/378H04N9/07
CPCH04N5/23241H04N5/343H04N5/378H04N5/374H04N5/347H04N23/65H04N25/42H04N25/46H04N25/70H04N25/76H04N25/75
Inventor ANG, LIN PING
Owner MICRON TECH INC
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