Multiplexed pixel column architecture for imagers

a multi-pixel column and imager technology, applied in the field of imaging devices, can solve the problems of increasing the frequency of the switching in the readout path, increasing the readout noise of imagers, and more power consumption than desired, so as to reduce the noise and power consumption of readouts, simplify the column select circuitry, and speed up the readout speed
US20050062866A1Inactive Publication Date: 2005-03-24MICRON TECH INC
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
MICRON TECH INC
Publication Date
2005-03-24
Estimated Expiration
Not applicable · inactive patent

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Abstract

An imager with a multiplexer located at the pixel output line connected to associated column sample and hold circuitry. The multiplexer ensures that signals from pixels within a column are output to the correct output channels in the readout path. By having the multiplexer at the pixel output line, before any sample and hold circuitry, the imager can use simplified column select circuitry when signals are being read out to the output channels. As such, parasitic capacitance at the readout path is reduced, which produces faster readout speeds than typical imagers. In addition, the imager achieves lower readout noise and less power consumption than typical imagers.
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Description

FIELD OF THE INVENTION

[0001] The invention relates generally to imaging devices, and more particularly to an imager with a multiplexed pixel column architecture. BACKGROUND

[0002] Imaging devices such as complementary metal oxide semiconductor (CMOS) imagers are commonly used in photo-imaging applications.

[0003] A CMOS imager circuit includes a focal plane array of pixel cells, each one of the cells including either a photogate, photoconductor or a photodiode overlying a substrate for accumulating photo-generated charge in the underlying portion of the substrate. A readout circuit is connected to each pixel cell and includes at least an output field effect transistor formed in the substrate and a charge transfer section formed on the substrate adjacent the photogate, photoconductor or photodiode having a sensing node, typically a floating diffusion node, connected to the gate of an output transistor. The imager may include at least one electronic device such as a transistor for tr...

Claims

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