Methods of treating non-sputtered regions of PVD target constructions to form particle traps

Abstract

The invention includes PVD targets having non-sputtered regions (such as, for example, sidewalls), and particle-trapping features formed along the non-sputtered regions. In particular aspects, the particle-trapping features can comprise a pattern of bent projections forming receptacles, and can comprise microstructures on the bent projections. The targets can be part of target / backing plate constructions, or can be monolithic. The invention also includes methods of forming particle-trapping features along sidewalls of a sputtering target or along sidewalls of a target / backing plate construction. The features can be formed by initially forming a pattern of projections along a sidewall. The projections can be bent and subsequently exposed to particles to form microstructures on the bent projections.

Description

RELATED PATENT DATA [0001] This patent claims priority to U.S. Provisional Patent Application 60 / 396,543, which was filed Jul. 16, 2002.TECHNICAL FIELD [0002] The invention pertains to methods of forming particle traps along non-sputtered regions of a physical vapor deposition (PVD) target construction, and pertains to PVD target constructions having projections along at least one non-sputtered region. BACKGROUND OF THE INVENTION [0003] Deposition methods are utilized for forming films of material across substrate surfaces. Deposition methods can be utilized in, for example, semiconductor fabrication processes to form layers ultimately utilized in fabrication of integrated circuitry structures and devices. An exemplary deposition method is physical vapor deposition (PVD), which includes sputtering processes. [0004] A physical vapor deposition operation is described with reference to a sputtering apparatus 110 in FIG. 1. Apparatus 110 is an example of an ion metal plasma (IMP) appara...

AI Technical Summary

Problems solved by technology

Problems can occur in deposition processes if particles are formed, in that the particles can fall into a deposited film and disrupt desired properties of the film.

Although some of the textured surfaces have been found to reduce particle formation, the particle formation is frequently not reduced to a desired level.

In some instances, the texturing on a sidewall surface of a target can ultimately lead to formation of very large particles.

The films can fall onto a substrate during a PVD process to cause a defect in a layer deposited during the PVD process.

This problem is frequently encountered with textures which have been formed through machine scrolling and / or knurling.

Another problem is that the formation of a textured surface can itself introduce contaminants.

Some of the particles from for the blasting can be imbedded in the target during the blasting process, remain with the target as it is inserted in a PVD chamber, and then fall from the target during a sputtering process to become problematic contaminants during the sputtering.

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