Method for toolmatching and troubleshooting a plasma processing system

Abstract

A method tests a plasma processing system having a chamber, an RF power source, and a matching network. An RF power signal is generated from the RF power source to the chamber without igniting any plasma within the chamber. The voltage of the RF power signal, the current of the RF power signal, and the phase of the RF power signal, received by the chamber is measured while holding other parameters affecting the chamber constant. A value representative of an impedance of the chamber is computed based on the voltage, the current, and the phase. The value is then compared with a reference value to determine any defects in the plasma processing system. The reference value is representative of the impedance of a defect-free chamber.

Description

RELATED APPLICATION [0001] The present application claims the benefit of U.S. Provisional Patent Application Ser. No. 60 / 414,108, filed Sep. 26, 2002 in the name of inventors Armen Avoyan and Seyed Jafar Jafarian-Tehrani and commonly assigned herewith.FIELD OF THE INVENTION [0002] The present invention relates to the fabrication of an electronic device. More particularly, the present invention relates to a method and system for verifying a plasma processing system. BACKGROUND OF THE INVENTION [0003] Various forms of processing with ionized gases, such as plasma etching and reactive ion etching, are increasing in importance particularly in the area of semiconductor device manufacturing. Of particular interest are the devices used in the etching process. Capacitively and inductively coupled plasma etching systems may be used in the processing and fabrication of semiconductor devices. A plasma processing system typically includes a plasma reactor having a plasma chamber therein. An RF ...

AI Technical Summary

Problems solved by technology

Unfortunately, this is most typically not the case. FIG. 1, for example, shows RF network 10 that produces RF power for an electronic device and fabrication reactor.

For example, RF power generator 12, while including solid state technology, still is a bulky system that consumes an undesirable about of clean room floor space.

As a result, performance of RF network 10 is often adversely affected by installation dependencies due to generator placement.

There may exist many other problems associated with the plasma processing chamber.

The plasma processing chamber may not produce the same results after a long usage period because of chamber wear and polymer deposits.

Other problems such as improper hardware assembly and inadequate torque requirements may also cause the plasma processing chamber to produce inconsistent yields.

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