Creating a dielectric layer using ALD to deposit multiple components

Abstract

A dielectric layer is created for use with non-volatile memory and / or other devices. The dielectric layer is created using atomic layer deposition to deposit multiple components whose mole fractions change as a function of depth in the dielectric layer in order to create a rounded bottom of a conduction band profile for the dielectric layer.

Description

[0001] This application is a continuation-in-part application of U.S. patent application Ser. No. 10 / 762,181, entitled “Non-Volatile Memory Cell Using High-K Material and Inter-Gate Programming,” filed Jul. 17, 2003, incorporated herein by reference in its entirety.CROSS-REFERENCE TO RELATED APPLICATIONS [0002] The following applications are cross-referenced and are incorporated by reference herein in their entirety: [0003] U.S. patent application Ser. No. ______ [Attorney Docket No. SAND-01074US0], entitled “ATOMIC LAYER DEPOSITION WITH NITRIDATION AND OXIDATION,” inventor Nima Mokhlesi, filed the same day as the present application; and [0004] U.S. patent application Ser. No. ______ [Attorney Docket No. SAND-01022US1], entitled “DIELECTRIC LAYER CREATED USING ALD TO DEPOSIT MULTIPLE COMPONENTS,” inventor Nima Mokhlesi, filed the same day as the present application. BACKGROUND OF THE INVENTION [0005] 1. Field of the Invention [0006] The present invention relates to dielectric layer...

AI Technical Summary

Benefits of technology

The patent describes a method for creating a dielectric layer with a rounded bottom of a conduction band profile for use in electronic devices such as flash memory devices. The method involves depositing multiple components using atomic layer deposition, where the mole fractions of the components change as a function of depth in the layer. The resulting dielectric layer has a rounded bottom of a conduction band profile that can improve performance and reliability of the electronic device. The method can be used with various types of flash memory devices and other non-volatile memory devices.

Problems solved by technology

However, such a proposal is not optimal.

Furthermore, an author of Likharev I and Likharev II specifically suggests that such a triangular barrier may have fabrication issues.

Similarly, the '654 patent proposes a tunnel barrier dielectric layer with a round shaped bottom of a conduction band profile; however, the '654 patent admits that such a barrier may be difficult to manufacture.

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