High capacity low cost multi-state magnetic memory

a multi-state, high-capacity technology, applied in the field of non-volatile magnetic memory, can solve the problems of large physical size, high power dissipation, and high latency of access to data

Active Publication Date: 2007-08-30
AVALANCHE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Though widely used and commonly accepted, such media suffer from a variety of deficiencies, such as access latency, higher power dissipation, large physical size and inability to withstand any physical shock.
Other dominant storage devices are dynamic random access memory (DRAM) and static RAM (SRAM) which are volatile and very costly but have fast random read / write access time.
Although NAND-based flash memory is more costly than HDD's, it has replaced magnetic hard drives in many applications such as digital cameras, MP3-players, cell phones, and hand held multimedia devices due, at least in part, to its characteristic of being able to retain data even when power is disconnected.
However, as memory dimension requirements are dictating decreased sizes, scalability is becoming an issue because the designs of NAND-based Flash memory and DRAM memory are becoming difficult to scale with smaller dimensions.
For example, NAND-based flash memory has issues related to capacitive coupling, few electrons / bit, poor error-rate performance and reduced reliability due to decreased read-write endurance.
It is believed that NAND flash, especially multi-bit designs thereof, would be extremely difficult to scale below 45 nanometers.
Likewise, DRAM has issues related to scaling of the trench capacitors leading to very complex designs which are becoming increasingly difficult to manufacture, leading to higher cost.
Design of different memory technology in a product adds to design complexity, time to market and increased costs.
For example, in hand-held multi-media applications incorporating various memory technologies, such as NAND Flash, DRAM and EEPROM / NOR flash memory, complexity of design is increased as are manufacturing costs and time to market.
Another disadvantage is the increase in size of a device that incorporates all of these types of memories therein.
One of the problems with prior art memory structures is that the current and power requirements are too high to make a functional memory device or cell.
This also poses a key concern regarding the reliability of such devices due to likely dielectric break-down of the tunneling barrier layer and thereby making it non-functional.
The challenge with other prior art techniques has been that the switching current is too high to allow the making of a functional device for memory applications due to the memory's high power consumption.
An additionally known problem is using magnetic memory to store more than two states therein.

Method used

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  • High capacity low cost multi-state magnetic memory
  • High capacity low cost multi-state magnetic memory
  • High capacity low cost multi-state magnetic memory

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Embodiment Construction

[0029]In the following description of the embodiments, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration of the specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized because structural changes may be made without departing from the scope of the present invention.

[0030]In an embodiment of the present invention, a multi-state magnetic memory cell is disclosed. In one embodiment of the present invention, a stack of magnetic tunnel junction (MTJ) is formed, each MTJ being formed of at least three layers, a barrier layer formed between a fixed layer and a free layer, each MTJ being separated from another by a conductive layer, the stack forming a multi-state magnetic memory cell for storing at least two bits of digital information.

[0031]Referring now to FIG. 1, relevant layers of a multi-state current-switching magnetic memory element 100 are shown, in ...

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Abstract

One embodiment of the present invention includes a multi-state current-switching magnetic memory element having a stack of magnetic tunneling junction (MTJ) separated by a non-magnetic layer for storing more than one bit of information, wherein different levels of current applied to the memory element cause switching to different states.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority to U.S. Provisional Application No. 60 / 777,012 filed on Feb. 25, 2006 and entitled “A High Capacity Low Cost Multi-State Magnetic Memory” and is a continuation-in-part of U.S. patent application Ser. No. 11 / 674,124 entitled “Non-Uniform Switching Based Non-Volatile Magnetic Base Memory”, filed on Feb. 12, 2007, the disclosure of which is incorporated herein by reference, as though set forth in full.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates generally to non-volatile magnetic memory and particularly to multi-state magnetic memory.[0004]2. Description of the Prior Art[0005]Computers conventionally use rotating magnetic media, such as hard disk drives (HDDs), for data storage. Though widely used and commonly accepted, such media suffer from a variety of deficiencies, such as access latency, higher power dissipation, large physical size and inability to withst...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G11C11/00
CPCB82Y10/00G11C11/16G11C11/5607G11C11/1675H01L27/222H01L27/228H01L43/08G11C2211/5615G11C11/161G11C11/1673H10B61/00H10B61/22H10N50/10
Inventor RANJAN, RAJIV YADAVASSAR, MAHMUDKESHTBOD, PARVIZ
Owner AVALANCHE TECH
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