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Substrate processing apparatus

Inactive Publication Date: 2008-01-31
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0018]In view of the above-described circumstances, the present invention is provided, and an object of the present invention is to prevent heat radiation from a furnace port in a processing furnace, increase a uniform temperature length of a processing chamber and improve uniformity of a temperature distribution in a surface of a substrate, and improve a processing quality and yield.
[0028](2) A temperature difference between a substrate peripheral edge and a substrate center can be suppressed.
[0030](4) Uniformity of a thickness of a film formed on the substrate is improved.

Problems solved by technology

However, the heat radiation itself can not be prevented, and therefore a dummy wafer is loaded on the lower part of the substrate holding part 15, and the wafer is processed by a uniformly heating member in the processing chamber.
However, problems are involved as follows.
When the heat radiation from the furnace port 6 is large, a uniform temperature length (shaft length of the uniformly heating member) becomes short, thus reducing processing numbers of the wafer 17, resulting in deteriorating productivity.
Moreover, when the temperature distribution occurs, in-surface uniformity of a film thickness is deteriorated, thereby inviting the deterioration of a processing quality and yield.

Method used

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  • Substrate processing apparatus
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Examples

Experimental program
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second embodiment

[0092]FIG. 5 shows a

[0093]In FIG. 5, the same signs and numerals are assigned to the equivalent part of FIG. 3.

[0094]In the second embodiment, a power receiving shaft portion 85 is extended downward from the rotation shaft 63. The lower end part of this power receiving shaft portion 85 is penetrated through a holder 79 and protruded downward. The power receiving shaft portion 85 has a hollow structure and the interior of this power receiving shaft portion 85 is communicated with the hollow part of the boat support 72.

[0095]The power receiver 76 is disposed so as to be positioned at the lower end part of the interior of the power receiving shaft portion 85, the power feeder 83 is provided in a non-contact state so as to surround the lower end part of the power receiving shaft portion 85, and the power feeder 83 and the power receiver 76 are faced with each other to realize the induction coupling.

[0096]The power feeder 83 is connected to the high frequency power source 84, and when th...

third embodiment

[0098]FIG. 6 and FIG. 7 show a

[0099]In FIG. 6, the same signs and numerals are assigned to the equivalent part of FIG. 3, and explanation therefore is omitted.

[0100]A cylindrical shaped rotation shaft 63 is protrusively provided downward at the undersurface center of the boat seat 71, a thick part of the rotation shaft 63 is further hollowed, and cylindrical shaped pair of electrostatic plates 87a and 87b are concentrically provided vertically in the inside of the thick part. One of the leads 75 connected to the heater 74 is connected to the electrostatic coupling plate 87a, and the other lead 75 is connected to the electrostatic plate 87b.

[0101]Power supply plates 88a and 88b are provided in the center of the rotation shaft 63 concentrically with the electrostatic coupling plates 87a and 87b. The power supply plates 88a and 88b are disposed so as to face the electrostatic coupling plates 87a and 87b, and the power supply plates 88a and 88b are connected to the high frequency power...

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Abstract

A substrate processing apparatus includes a processing chamber, a substrate holding part that holds substrates of required numbers in the processing chamber, a gas supply / exhaust part that supplies or exhausts required gas into the processing chamber, a rotation part that rotates the substrate holding part, a first heating part provided in the substrate holding part so as to face at least an upper surface of each substrate held by the substrate holding part, and a power supply part that supplies power to the first heating part in a non-contact state by electromagnetic coupling.

Description

TECHNICAL FIELD[0001]The present invention relates to a substrate processing apparatus applying processing such as generating a thin film, diffusing impurities, annealing, and etching, to a substrate such as a silicon wafer.BACKGROUND ART[0002]A batch type substrate processing apparatus for processing substrates of required numbers at once is given as an example of the substrate processing apparatus for processing the substrate such as a silicon wafer and a glass substrate.[0003]The batch type substrate processing apparatus, for example, a vertical substrate processing apparatus has a vertical processing furnace, and the required processing is applied to the substrate in such a manner that the substrate is contained in a processing chamber of this processing furnace, and the processing chamber is exhausted while heating the substrate and introducing processing gas into the processing chamber, in a state that the processing chamber is sealed hermetically.[0004]The substrate to be pro...

Claims

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Application Information

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IPC IPC(8): C23C16/00C23F1/00
CPCC23C16/4584H01L21/68792H01L21/67109C23C16/46
Inventor SHIMIZU, HIRONOBUISHIMARU, NOBUO
Owner KOKUSA ELECTRIC CO LTD