Vertical Type Nanotube Semiconductor Device

Abstract

A vertical type nanotuhe semiconductor device including a nanotube bit line, disposed on a substrate and in parallel with the substrate and composed of a nanotube with a conductive property, and a nanotube pole connected to the bit line vertically to the substrate and provides a channel through which carriers migrate. By manufacturing the semiconductor device using the bit line composed of the nanotube, cutoff of an electrical connection of the bit line is prevented and an integration density of the semiconductor device can be improved.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation of U.S. patent application Ser. No. 11 / 325,964, filed on Jan. 5, 2006, which claims priority from Korean Patent Application No. 10-2005-0025368, filed on Mar. 28, 2005, the disclosures of both of which are incorporated herein by reference in their entiretyFIELD OF THE INVENTION[0002]The present invention relates to integrated circuit devices and, more particularly, to integrated circuit devices having nanotube conductive layers therein.BACKGROUND OF THE INVENTION[0003]Nanotubes with conductive properties are cylindrical members with highly microscopic diameters of several to several tens of nanometers and significantly large aspect ratios of about 10˜1,000. Carriers are migrated by ballistic transport within a nanotube having a generally uniform resistance along its length. Particularly, a carbon nanotube has carrier mobility of about 70 times or more than that of silicon at a room temperature.[0004]Beca...

AI Technical Summary

Benefits of technology

This approach prevents electrical cutoffs and improves integration density by maintaining conductivity and enhancing bonding strength between nanotube components, thereby ensuring reliable carrier migration and efficient device performance.

Problems solved by technology

However, if the bit line of several to several hundreds of nanometers is fabricated in a typical manner that simply decreases a width of a conductive material, then grain boundary defects within the bit line may cut off electrical connection.

Images