Semiconductor device and method of manufacturing semiconductor device
a semiconductor and semiconductor technology, applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problems of gate electrodes that cannot be easily fully silicided, gate electrodes with a large gate length and a large gate width tend to be silicided, and the thickness reduction of the gate oxide film disadvantageously depletes the gate electrod
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first embodiment
[0056]FIG. 1 is a sectional diagram of a semiconductor device 100 according to the first embodiment of the present invention. FIG. 1 shows two MIS transistors 101 and 102 having lengths different from each other. It is assumed that the gate widths of the MIS transistor 101 and the MIS transistor 102 are equal to each other. The MIS transistors 101 and 102 may be p-type transistors or n-type transistors. In the first embodiment, gate electrodes are controlled in thickness to fully silicide a plurality of gate electrodes having different gate lengths.
[0057]The semiconductor device 100 includes a semiconductor substrate 5, a source-drain silicide layer 10, an STI (Shallow Trench Isolation) 20, a side wall 30, a source-drain diffusion layer 40, a first gate insulation film 51, a second gate insulation film 52, a first gate electrode 11, and a second gate electrode 12.
[0058]The STI 20 performs device isolation between the MIS transistors 101 and 102. The first gate insulation film 51 and...
second embodiment
[0074]FIG. 6 is a sectional diagram of a semiconductor device 200 according to the second embodiment of the present invention. In the second embodiment, an MIS transistor 102 is formed on a semiconductor region 90 formed on a semiconductor substrate 5. Therefore, the bottom surface of the second gate electrode 12 is set at a higher level from the surface 7 of the semiconductor substrate 5 than the bottom surface of the first gate electrode 11. As a result, the upper surface of the second gate electrode 12 can be set at a level equal to the upper surface of the first gate electrode 11, and the thickness of the second gate electrode 12 is smaller than the thickness of the first gate electrode 11. The other constitution in the second embodiment may be the same as that in the first embodiment.
[0075]The semiconductor region 90 consists of, e.g., silicon single crystal. The thickness of the semiconductor region 90 may be equal to a difference between the thickness of the first gate electr...
third embodiment
[0089]FIG. 11 is a sectional diagram of a semiconductor device 300 according to the third embodiment of the present invention. In the third embodiment, a second gate electrode 12 includes a plurality of sub-gate electrodes 301 and a plurality of inter-electrode insulation films 302. The plurality of sub-gate electrodes 301 are parallel formed on a second gate insulation film. The inter-electrode insulation film 302 is formed between the adjacent sub-gate electrodes 301. Therefore, the sub-gate electrodes 301 and the inter-electrode insulation films 302 are alternately formed to give the appearance that the sub-gate electrodes 301 and the inter-electrode insulation films 302 have a striped shape on the section or the upper surface.
[0090]The gate length of the first gate electrode 11 is 20 nm, for example. The gate length of the second gate electrode 12 is 120 nm, for example. The width of the sub-gate electrode 301 is 20 nm, for example. The width of the inter-electrode insulation fi...
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