Substrate treatment apparatus, and substrate support to be used for the apparatus

a substrate support and treatment apparatus technology, applied in the direction of electrical devices, basic electric elements, semiconductor/solid-state device manufacturing, etc., can solve the problems of difficult spin out of etching liquid moving to the peripheral portion of the upper surface of the wafer, unfavorable in-plane uniformity, etc., to achieve the effect of improving in-plane uniformity

Inactive Publication Date: 2009-08-06
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0030]With this arrangement, the etching liquid supplied to the major surface of the substrate spreads over the major surface of the substrate and the extension surface of the substrate support, whereby the continuous liquid film is formed over the major surface of the substrate and the extension surface of t

Problems solved by technology

Thus, the peripheral portion of the upper surface of the wafer is etched at a higher etching rate than the center portion, resulting in uneven treatment of the upper surface of the wafer.
If the wafer is rotated at such a low rot

Method used

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  • Substrate treatment apparatus, and substrate support to be used for the apparatus
  • Substrate treatment apparatus, and substrate support to be used for the apparatus
  • Substrate treatment apparatus, and substrate support to be used for the apparatus

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Experimental program
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first embodiment

[0046]FIG. 1 is a sectional view schematically showing the construction of a substrate treatment apparatus 1 according to one embodiment (first embodiment) of the present invention.

[0047]The substrate treatment apparatus 1 is of a single substrate treatment type which performs an etching treatment on a back surface (non-device formation surface) opposite from a front surface (device formation surface) of a round wafer W such as a silicon wafer for thinning the wafer W. In this embodiment, hydrofluoric / nitric acid (a mixture of hydrofluoric acid and nitric acid) is used as an etching liquid.

[0048]The substrate treatment apparatus 1 includes a substrate support (susceptor) 3 which generally horizontally holds the wafer W with the back surface of the wafer W facing up, a spin chuck 4 which supports the substrate support 3 and serves for rotating the wafer W and the substrate support 3 about a vertical axis extending through the center of the wafer W, a hydrofluoric / nitric acid nozzle 5...

second embodiment

[0092]In the second embodiment, a slit nozzle (etching liquid supply mechanism) 61 which spouts hydrofluoric / nitric acid in the form of an elongated profile stream is used instead of the straight nozzle provided as the hydrofluoric / nitric acid nozzle 5.

[0093]In this embodiment, a substrate support 70 including a taper surface 71 on its upper surface is employed instead of the substrate support 3 shown in FIGS. 2A and 2B. In other words, the substrate holding mechanism consists of the substrate support 70 and spin chuck 4.

[0094]The slit nozzle 61 includes a slit spout 63 which is an opening linearly extending along a predefined Y-axis and opposed to the upper surface of the wafer W held by the substrate support 70. The slit nozzle 61 is supported slidably along an X-axis perpendicular to the Y-axis by a support rail (not shown) The X-axis and the Y-axis extend parallel to the upper surface of the wafer W (horizontally). A slit nozzle drive mechanism 64 is connected to the slit nozzle...

fourth embodiment

[0138]Next, an exemplary wafer treatment to be performed by the substrate treatment apparatus 100 will be described.

[0139]For the wafer treatment, the controller 95 drives the lift-pin lift drive mechanism 108 to move up the lift pins 102 to the projecting position before an untreated wafer W is transported into the treatment chamber 2 (before Step S11 in FIG. 11). Thereafter, the untreated wafer W is transported into the treatment chamber 2 by the transport robot (not shown), and rested on the lift pins 102. Then, the controller 95 drives the lift-pin lift drive mechanism 108 to move the lift pins 102 down to the retracted position. Thus, the wafer W is accommodated in the accommodation recess 84. In this manner, the wafer W is transferred to the spin base 82 (a step corresponding to Step S11 in FIG. 11).

[0140]When the controller 95 closes the relief valve 93 and opens the suction valve 90 with the vacuum generator 87 being active, air is sucked from the space 94 and the spaces 10...

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Abstract

The substrate treatment apparatus according to the present invention includes a substrate holding mechanism including a support member which supports a substrate, and an extension surface which laterally surrounds one major surface of the substrate supported by the support member and extends continuously to the major surface of the substrate, a rotation mechanism which rotates the substrate holding mechanism, and an etching liquid supply mechanism which supplies an etching liquid onto the major surface of the substrate held by the substrate holding mechanism.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a substrate treatment apparatus which performs an etching treatment to etch a major surface of a substrate with an etching liquid, and to a substrate support to be used for the apparatus. Examples of the substrate to be subjected to the etching treatment include semiconductor wafers, glass substrates for liquid crystal display devices, glass substrates for plasma display devices, substrates for FED (Field Emission Display) devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, and substrates for photo masks.[0003]2. Description of Related Art[0004]In semiconductor device production processes, a liquid treatment is often performed to treat a semiconductor wafer (hereinafter referred to simply as “wafer”) with a treatment liquid. An exemplary liquid treatment is an etching treatment which is performed by supplying an etching liquid to a ...

Claims

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Application Information

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IPC IPC(8): C23F1/08
CPCH01L21/68742H01L21/67051H01L21/304H01L21/306H01L21/30604H01L21/6708H01L21/68764
Inventor ARAI, KENICHIRONADA, KAZUNARI
Owner DAINIPPON SCREEN MTG CO LTD
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