Solid-state imaging device and electronic apparatus
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first embodiment
2. First Embodiment
[0037]Next, a main characteristic part of the solid-state imaging device according to an embodiment of the present invention will be described.
[0038]In this section, the OCCF 4 will be described in detail as the main characteristic part of the solid-state imaging device.
Exemplary Configuration
[0039]FIG. 3 is a sectional side view showing an exemplary specific configuration of the OCCF according to the embodiment of the present invention.
[0040]The OCCF 4 shown in FIG. 3 is formed of a multilayer film in which a plurality of layers made of materials having different refractive indices is laminated. As the materials having different refractive indices, inorganic materials can be used. This is because inorganic materials are advantageous over organic materials in view of cost, durability, degree of freedom in process choice, and the like. Specifically, examples of the plurality of inorganic materials having different refractive indices include silicon dioxide (SiO2) h...
second embodiment
3. Second Embodiment
[0078]Next, another exemplary configuration of a main part of the solid-state imaging device according to an embodiment of the present invention will be described.
[0079]In this section, only the difference from the first embodiment will be described.
[0080]FIG. 11 is a sectional side view showing another exemplary specific configuration of the OCCF according to the embodiment of the present invention.
[0081]The OCCF 4 shown in FIG. 11 has the defect layer 11 which is different from that of the first embodiment described above.
[0082]In the defect layer 11 according to the present embodiment, the ratio of areas of the respective portions 11a and 11b in the regular pattern of the TiO2 portions 11a and the SiO2 portions 11b constituting the defect layer 11 is different at respective positions which correspond to the plurality of light-receiving elements 1 arranged in the surface. That is to say, the area ratio (duty ratio) of the TiO2 portions 11a and the SiO2 portions...
third embodiment
4. Third Embodiment
[0092]Next, another exemplary configuration of a main part of the solid-state imaging device according to an embodiment of the present invention will be described.
[0093]In this section, only the difference from the first or second embodiment will be described.
[0094]FIG. 13 is a sectional side view showing another exemplary specific configuration of the OCCF according to the embodiment of the present invention.
[0095]The OCCF 4 shown in FIG. 13 has the defect layer 11 which is different from that of the first or second embodiment.
[0096]In the defect layer 11 according to the present embodiment, the ratio of areas of the TiO2 portions 11a and the SiO2 portions 11b constituting the defect layer 11 is different at different positions which are respectively located closer to the central portion and the periphery of a region corresponding to one light-receiving element 1. That is to say, the area ratio (duty ratio) of the TiO2 portions 11a and the SiO2 portions 11b which...
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