Apparatus for and method of processing substrate

a substrate and processing apparatus technology, applied in the direction of chemistry apparatus and processes, cleaning processes and apparatus, cleaning using liquids, etc., can solve the problems of requiring apparatus costs, collapsing adjacent protruding portions,

Inactive Publication Date: 2012-03-29
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008]The present invention is intended for a substrate processing apparatus and a substrate processing method which are capable of drying a substrat

Problems solved by technology

This gives rise to a problem such that, in the drying process of the replacement liquid, surface tension (or capillary force) acting on a boundary surface between the liquid entering the microstructure of a pattern and a gas in contact with the liquid causes adjacent protruding portions of the pattern to attract each other, there

Method used

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  • Apparatus for and method of processing substrate
  • Apparatus for and method of processing substrate
  • Apparatus for and method of processing substrate

Examples

Experimental program
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first preferred embodiment

[0022]A substrate processing apparatus 1 as shown in FIG. 1 is a system of process units which is used, for example, in the course of a developing process of a semiconductor substrate W for use as a material of a semiconductor device, and which performs a cleaning process and a drying process after the developing process. The substrate processing apparatus 1 principally includes a substrate station 5, a transfer unit 20, a developer unit 10, and a dryer unit 30. The substrate processing apparatus 1 to be described below is configured as, but not limited to, a single-substrate type processing system for serially processing wafers or substrates W, and may be configured as a batch-type processing system.

[0023]The substrate station 5 includes a plurality of cassettes 51 (in this preferred embodiment, three cassettes 51a, 51b and 51c) placed thereon. A partition wall divides the developer unit 10 and the dryer unit 30 from each other. Substrates W subjected to an exposure process are sto...

second preferred embodiment

[0071]Next, a dryer unit 30b according to a second preferred embodiment of the present invention will be described with reference to FIGS. 13 and 14. Like reference numerals and characters are used in the second preferred embodiment to designate components identical with those of the first preferred embodiment described above, and only differences from the dryer unit 30 of the first preferred embodiment will be described. The sublimation material for use in the second preferred embodiment is carbon dioxide, as in the first preferred embodiment.

[0072]The liquid carbon dioxide lc covering the surface of the substrate W placed in the dryer chamber 31 according to the first preferred embodiment is solidified by cooling. According to the second preferred embodiment, the liquid carbon dioxide lc is solidified by decreasing the pressure in the dryer chamber 31 in an adiabatic state.

[0073]As shown in FIG. 13, the dryer unit 30b according to the second preferred embodiment is configured such...

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PUM

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Abstract

A rinsing liquid adheres to a substrate subjected to a cleaning process. The rinsing liquid on the substrate is first replaced with IPA liquid. While the substrate covered with the IPA liquid is held in a dryer chamber, liquid carbon dioxide is supplied to the surface of the substrate. Liquid nitrogen is supplied to cool down the interior of the dryer chamber. This solidifies the liquid carbon dioxide on the substrate into solid carbon dioxide. Thereafter, the pressure in the dryer chamber is returned to atmospheric pressure, and gaseous nitrogen is supplied into the dryer chamber. Thus, the temperature in the dryer chamber increases. The solid carbon dioxide on the surface of the substrate is sublimated, and is hence removed from the substrate. All of the steps are performed while carbon dioxide is not in a supercritical state but in a non-supercritical state.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a substrate processing apparatus and a substrate processing method which remove liquid adhering to various substrates (referred to simply as “substrates” hereinafter) including a semiconductor substrate, a glass substrate for a flat panel display, a substrate for an optical disk, a solar cell panel and the like from the substrates.[0003]2. Description of the Background Art[0004]In the process steps of manufacturing a semiconductor device, for example, a variety of wet processes using liquid are performed on a substrate, and a drying process is then performed on the substrate subjected to such wet processes. In the process of development in photolithography, a chemical liquid such as a developing solution is applied to a substrate to which a pattern is transferred by exposure to light, and thereafter the substrate is cleaned using a rinsing liquid to remove the chemical liquid from the su...

Claims

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Application Information

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IPC IPC(8): B08B3/00
CPCH01L21/67034H01L21/67028H01L21/302B08B7/0014
Inventor MIYA, KATSUHIKOKITAGAWA, HIROAKI
Owner DAINIPPON SCREEN MTG CO LTD
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