Semiconductor device having different fin widths

a technology of mikro-conductor and fin, applied in the direction of mikro-conductor devices, transistors, electrical apparatus, etc., can solve the problems of gate resistance limitation gain, increase noise in rf circuits, increase the harmonic distortion of signals in amplifier circuits,

Inactive Publication Date: 2012-06-14
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Harmonic distortion of signals in amplifier circuits increases with signal amplitude and limits the dynamic range of these circuits.
Gate resistance limits gain and increases noise in RF circuits.
The harmonic distortion of signals in amplifier circuits increases with signal amplitude and therefore limits the dynamic range of such circuits.
This is due to the fact that the frequencies in range of third harmonics are in the vicinity of the signal frequencies and consequently cannot be suppressed by filtering.
Changing the fin width can result in the change in threshold voltage which occurs due to quantum confinement and electrostatic effects.

Method used

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  • Semiconductor device having different fin widths
  • Semiconductor device having different fin widths
  • Semiconductor device having different fin widths

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Embodiment Construction

[0034]The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the invention. The various embodiments are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments. In this document, the terms “a” or “an” are used, as is common in patent documents, to include one or more than one. In this document, the term “or” is used to refer to nonexclusive or, such that “A or B” includes “A but not B,”“B but not A,” and “A and B,” unless otherwise indicated.

[0035]The term “substrate” is understood to include a semiconductor wafer. The term “substrate” is also us...

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Abstract

A semiconductor device includes at least one source region and at least one drain region. A plurality of fins extend between a source region and a drain region, wherein at least one fin has a different width than another fin. At least one gate is provided to control current flow through such fins. Fin spacing may be varied in addition to, or alternative to utilizing different fin widths.

Description

RELATED APPLICATIONS[0001]This patent application is a Continuation of U.S. application Ser. No. 12 / 484,682, filed on Jun. 15, 2009, which claims the benefit of priority, under 35 U.S.C. Section 119(e), to U.S. Provisional Patent Application Ser. No. 61 / 073,183, filed on Jun. 17, 2008, which applications are incorporated herein by reference in their entirety.TECHNICAL FIELD[0002]Embodiments described herein relate generally to semiconductor circuits which include multi-gate field effect transistor devices.BACKGROUND[0003]Semiconductor devices such as multi-gate field effect transistors are often designed for applications using circuits with down-scaled, extremely small devices. Semiconductor devices used for analog and RF applications may require different device characteristics compared to those used in digital applications. Harmonic distortion of signals in amplifier circuits increases with signal amplitude and limits the dynamic range of these circuits. Flicker noise (also referr...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/772
CPCH01L29/66818H01L29/7856H01L29/785
Inventor BAUMGARTNER, PETERSIPRAK, DOMAGOJ
Owner INFINEON TECH AG
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