Semiconductor device having different fin widths

Abstract

A semiconductor device includes at least one source region and at least one drain region. A plurality of fins extend between a source region and a drain region, wherein at least one fin has a different width than another fin. At least one gate is provided to control current flow through such fins. Fin spacing may be varied in addition to, or alternative to utilizing different fin widths.

Description

RELATED APPLICATIONS[0001]This patent application is a Continuation of U.S. application Ser. No. 12 / 484,682, filed on Jun. 15, 2009, which claims the benefit of priority, under 35 U.S.C. Section 119(e), to U.S. Provisional Patent Application Ser. No. 61 / 073,183, filed on Jun. 17, 2008, which applications are incorporated herein by reference in their entirety.TECHNICAL FIELD[0002]Embodiments described herein relate generally to semiconductor circuits which include multi-gate field effect transistor devices.BACKGROUND[0003]Semiconductor devices such as multi-gate field effect transistors are often designed for applications using circuits with down-scaled, extremely small devices. Semiconductor devices used for analog and RF applications may require different device characteristics compared to those used in digital applications. Harmonic distortion of signals in amplifier circuits increases with signal amplitude and limits the dynamic range of these circuits. Flicker noise (also referr...

AI Technical Summary

Benefits of technology

The patent text describes various methods for improving the performance of semiconductor devices that use multi-gate field effect transistors. The technical effects of the patent include reducing harmonic distortion, flicker noise, and gate resistance in RF circuits without changing the process. The methods include changing the fin width and gate dimensions, adding lumped resistance elements, and using a stepped fin structure. These improvements can lead to better dynamic range, resolution, and reduced noise in analog and RF circuits.

Problems solved by technology

Harmonic distortion of signals in amplifier circuits increases with signal amplitude and limits the dynamic range of these circuits.

Gate resistance limits gain and increases noise in RF circuits.

The harmonic distortion of signals in amplifier circuits increases with signal amplitude and therefore limits the dynamic range of such circuits.

This is due to the fact that the frequencies in range of third harmonics are in the vicinity of the signal frequencies and consequently cannot be suppressed by filtering.

Changing the fin width can result in the change in threshold voltage which occurs due to quantum confinement and electrostatic effects.

Images