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Receiver applied to a satellite down converter and radio frequency metal-oxide-semiconductor amplifier

a metal-oxide-semiconductor amplifier and receiver technology, applied in the direction of amplifiers with semiconductor devices/discharge tubes, amplifiers with field-effect devices, transmission, etc., can solve the problems of low power efficiency, large operation range of amplifiers, and difficulty in designing proper amplifiers applicable to satellite down converters. achieve higher power efficiency, improve power efficiency, and improve power efficiency

Active Publication Date: 2012-07-12
AMICCOM ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

"The patent describes a receiver and a radio frequency metal-oxide-semiconductor amplifier used in a satellite down converter. The receiver and amplifier adjust the resonant frequency of the amplifier to match the first and second bands of a satellite microwave band. This allows the amplifier to amplify signals of the first and second bands separately, resulting in higher quality, efficiency, and better image rejection."

Problems solved by technology

In the prior art, when a satellite down converter receives a signal of a satellite microwave band (a C band, an X band, a KU band, or a Ka band), operation range of an amplifier of the satellite down converter has to cover the whole satellite microwave band, that is, the operation range of the amplifier is very large, resulting in difficulty in designing a proper amplifier applicable to the satellite down converter.
As shown in FIG. 1B, because operation range of the radio frequency metal-oxide-semiconductor amplifier 100 has to cover the satellite microwave band and maintain proper gain flatness, the radio frequency metal-oxide-semiconductor amplifier 100 has a lower Q value, lower power efficiency, and worse image rejection, resulting in a designer of the satellite down converter facing difficulty in designing the radio frequency metal-oxide-semiconductor amplifier 100 to operate properly over all potential bands.

Method used

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  • Receiver applied to a satellite down converter and radio frequency metal-oxide-semiconductor amplifier
  • Receiver applied to a satellite down converter and radio frequency metal-oxide-semiconductor amplifier
  • Receiver applied to a satellite down converter and radio frequency metal-oxide-semiconductor amplifier

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Embodiment Construction

[0014]Please refer to FIG. 2. FIG. 2 is a diagram illustrating a receiver 200 applied to a satellite down converter according to an embodiment. The receiver 200 is coupled to an external antenna circuit 201. The receiver 200 includes a radio frequency metal-oxide-semiconductor amplifier 202, a mixer 204, and an intermediate frequency amplifier 206. The radio frequency metal-oxide-semiconductor amplifier 202 is used for receiving and amplifying a signal F1 of a first band and a signal F2 of a second band of a satellite microwave band from the external antenna circuit 201 according to a control signal CS, where the satellite microwave band is a C band, an X band, a KU band, or a Ka band. Taking the KU band as an example, the KU band is between 10.7 GHz and 12.75 GHz, a first band of the KU band is between 10.7 GHz and 11.7 GHz, and a second band of the KU band is between 11.7 GHz and 12.75 GHz. The mixer 204 is coupled to the radio frequency metal-oxide-semiconductor amplifier 202 for...

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Abstract

A receiver includes a radio frequency metal-oxide-semiconductor amplifier, a mixer, and an intermediate frequency amplifier. The radio frequency metal-oxide-semiconductor amplifier is used for receiving amplifying a signal of a first band and a signal of a second band of a satellite microwave band from an external antenna circuit according to a control signal. The mixer is coupled to the radio frequency metal-oxide-semiconductor amplifier for reducing the signal of the first band to a signal of a first intermediate frequency band according to a first oscillation frequency of a local oscillator, or reducing the signal of the second band to a signal of a second intermediate frequency band according to a second oscillation frequency of the local oscillator. The intermediate frequency amplifier is coupled to the mixer for amplifying and outputting the signal of the first intermediate frequency band and the signal of the second intermediate frequency band.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention is related to a receiver applied to a satellite down converter and a radio frequency metal-oxide-semiconductor amplifier, and particularly to a receiver applied to a satellite down converter and a radio frequency metal-oxide-semiconductor amplifier capable of changing a resonant frequency thereof with a usage band.[0003]2. Description of the Prior Art[0004]In the prior art, when a satellite down converter receives a signal of a satellite microwave band (a C band, an X band, a KU band, or a Ka band), operation range of an amplifier of the satellite down converter has to cover the whole satellite microwave band, that is, the operation range of the amplifier is very large, resulting in difficulty in designing a proper amplifier applicable to the satellite down converter. Please refer to FIG. 1A. FIG. 1A is a diagram illustrating a radio frequency metal-oxide-semiconductor amplifier 100 applied to the ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H04B1/26H03F3/16
CPCH03F1/56H03F3/193H04B1/0053H03F2200/249H03F2200/417H03F2200/111
Inventor HSU, KUANG-YUMA, CHIEN-CHIA
Owner AMICCOM ELECTRONICS CORP