647results about "Dual/triple band amplifier" patented technology

A low frequency loss correction circuit that improves the efficiency of a power amplifier at near-DC low frequencies The low frequency loss correction circuit can include a signal error detection circuit configured to produce an error signal in response to detecting one or more frequency components of a tracking signal below a cutoff frequency that are substantially attenuated through a capacitive path. The low frequency loss correction circuit can include a drive circuit configured to convert the error signal into a low frequency correction signal, and provide the low frequency correction signal to a voltage supply line, the low frequency correction signal including at least some of the one or more frequency components of the tracking signal below a cutoff frequency that are substantially attenuated through the capacitive path.

An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programmable attenuation and a programmable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjunction with image reject mixers to provide sufficient image frequency rejection. Filter tuning and inductor Q compensation over temperature are performed on chip. The filters utilize multi track spiral inductors. The filters are tuned using local oscillators to tune a substitute filter, and frequency scaling during filter component values to those of the filter being tuned. In conjunction with filtering, frequency planning provides additional image rejection. The advantageous choice of local oscillator signal generation methods on chip is by PLL out of band local oscillation and by direct synthesis for in band local oscillator. The VCOs in the PLLs are centered using a control circuit to center the tuning capacitance range. A differential crystal oscillator is advantageously used as a frequency reference. Differential signal transmission is advantageously used throughout the receiver.

A multi-frequency and multi-mode power amplifier is provided. The amplifier has a carrier power amplifier and a peaking power amplifier. The carrier power amplifier receives a first signal and outputs a first amplified signal, in which a first transistor size adjusting unit is included to adjust an equivalent transistor size based on a mode indication signal. The peaking power amplifier receives a second signal and outputs a second amplified signal, in which a second transistor size adjusting unit is included to adjust an equivalent transistor size based on the mode indication signal.

There are provided a transmission / reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission / reception switching circuit is mounted. As an element composing a transmission / reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

A high performance and cost effective method of RF-digital hybrid mode power amplifier systems with high linearity and high efficiency for multi-frequency band wideband communication system applications is disclosed. The present disclosure enables a power amplifier system to be field reconfigurable and support multiple operating frequency bands on the same PA system over a very wide bandwidth. In addition, the present invention supports multi-modulation schemes (modulation agnostic), multi-carriers and multi-channels.

Envelope tracking for radio-frequency applications. In some embodiments, a low frequency loss correction circuit can include a signal error detection circuit configured to produce an error signal in response to detecting one or more frequency components of a tracking signal below a cutoff frequency that are substantially attenuated through a capacitive path. The low frequency loss correction circuit can further include a drive circuit configured to convert the error signal into a low frequency correction signal, and provide the low frequency correction signal to a voltage supply line, the low frequency correction signal including at least some of the one or more frequency components of the tracking signal below a cutoff frequency that are substantially attenuated through the capacitive path.

A power amplifier comprises a series stack of power amplifier devices, connected in parallel to the amplifier input for receiving an RF input signal, and having output terminals being connected in series to the amplifier output. An intermediate coupling capacitor is connected between each adjacent pair of power amplifier devices in the series stack of power amplifier devices for DC isolation of said power amplifier devices. This reduces the required DC supply voltage, as well as allowing shorting of individual power amplifier devices in response to variation in the DC supply voltage.

A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.

A multi-band low noise amplifier (LNA) 105 includes an input stage having at least two inputs, a first input (103) coupled to a first input transistor for receiving signals in a first frequency band and a second input (104) coupled to a second input transistor for receiving signals in a second frequency band. The second frequency band spaced apart from the first frequency band. A bias network (218) having a band select input is coupled to the first and second input transistor, wherein a signal level applied to the band select input turns on one of the input transistors and turns off the other input transistors. The LNA (105) operates in the first frequency band when the first input transistor is on and the second frequency band when the second input transistor is on. A switched resonator (216) having a control input is provided, wherein application of a control signal to the control input tunes a resonant frequency of the LNA, and provides gain select, for operation in either the first or second frequency band.

A high performance and cost effective method of RF-digital hybrid mode power amplifier systems with high linearity and high efficiency for multi-frequency band wideband communication system applications is disclosed. The present disclosure enables a power amplifier system to be field reconfigurable and support multiple operating frequency bands on the same PA system over a very wide bandwidth. In addition, the present invention supports multi-modulation schemes (modulation agnostic), multi-carriers and multi-channels.

The present invention allows for the use of chip-package co-design of RF transceivers and their components by using discrete active devices in conjunction with passive components. Two particular components are described, including voltage controlled oscillators (VCOs) and low noise amplifiers (LNAs). The high quality passive components for use in the VCOs and LNAs may be obtained by the use of embedded passives in organic substrates. Further, the embedded passives may have multi-band characteristics, thereby allowing multi-band VCOs and LNAs to be implemented with fewer components. In situations where size is a concern, the active devices and passive components utilized in an RF transceiver may be implemented in a low form factor module of less than 1.1 mm thick according to an embodiment of the invention.