647results about "Dual/triple band amplifier" patented technology

A power amplifier matching circuit is provided. The matching circuit includes a ferro-electric tunable component. A control signal is applied to the tunable component, changing the component's impedance. This changes the impedance of the matching circuit.

A multi-band radio module for selectively supplying received signals in a plurality of frequency bands to a low noise amplifier via an input impedance matching circuit by switching over the operation mode of the low noise amplifier is comprised of: a pre-stage amplification unit including a plurality of fundamental amplifiers connected to one another in parallel, the fundamental amplifiers sharing a load impedance connected to a source voltage and a grounded degeneration impedance and having input signal lines commonly connected to an input impedance matching circuit; a post-stage amplifier to which the output signals of the plurality of fundamental amplifiers are commonly inputted; and a bias control unit for selectively turning on the fundamental amplifiers, wherein the input impedance of the low noise amplifier is selectively optimized for the matching circuit depending on the RF band to be received.

In a mobile telephone apparatus corresponding to dual-band provided with an RF power module to operate in two kinds of different frequencies, a common harmonics control circuit is provided to the output circuit of such RF power module to realize higher efficiency in view of controlling respective harmonics power for both band frequencies. Moreover, a means for selectively setting the bias is also provided so that the maximum efficiency can be attained depending on the output power required with respective communication systems with the bias control signal output from the CPU of the control unit interlocking with selection of frequency of the mobile telephone apparatus body.

A fully integrated, programmable mixed-signal radio transceiver comprising a radio frequency integrated circuit (RFIC) which is frequency and protocol agnostic with digital inputs and outputs, the radio transceiver being programmable and configurable for multiple radio frequency bands and standards and being capable of connecting to many networks and service providers. The RFIC includes a tunable resonant circuit that includes a transmission line having an inductance, a plurality of switchable capacitors configured to be switched into and out of the tunable resonant circuit in response to a first control signal, and at least one variable capacitor that can be varied in response to a second control signal, wherein a center resonant frequency of the resonant circuit is electronically tunable responsive to the first and second control signals that control a first capacitance value of the plurality of switchable capacitors and a second capacitance value of the at least one variable capacitor.

There are provided a transmission / reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission / reception switching circuit is mounted. As an element composing a transmission / reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programmable attenuation and a programmable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjunction with image reject mixers to provide sufficient image frequency rejection. Filter tuning and inductor Q compensation over temperature are performed on chip. The filters utilize multi track spiral inductors. The filters are tuned using local oscillators to tune a substitute filter, and frequency scaling during filter component values to those of the filter being tuned. In conjunction with filtering, frequency planning provides additional image rejection. The advantageous choice of local oscillator signal generation methods on chip is by PLL out of band local oscillation and by direct synthesis for in band local oscillator. The VCOs in the PLLs are centered using a control circuit to center the tuning capacitance range. A differential crystal oscillator is advantageously used as a frequency reference. Differential signal transmission is advantageously used throughout the receiver.

A multi-frequency and multi-mode power amplifier is provided. The amplifier has a carrier power amplifier and a peaking power amplifier. The carrier power amplifier receives a first signal and outputs a first amplified signal, in which a first transistor size adjusting unit is included to adjust an equivalent transistor size based on a mode indication signal. The peaking power amplifier receives a second signal and outputs a second amplified signal, in which a second transistor size adjusting unit is included to adjust an equivalent transistor size based on the mode indication signal.

A high performance and cost effective method of RF-digital hybrid mode power amplifier systems with high linearity and high efficiency for multi-frequency band wideband communication system applications is disclosed. The present disclosure enables a power amplifier system to be field reconfigurable and support multiple operating frequency bands on the same PA system over a very wide bandwidth. In addition, the present invention supports multi-modulation schemes (modulation agnostic), multi-carriers and multi-channels.

A multi-frequency and multi-mode power amplifier is provided. The amplifier has a carrier power amplifier and a peaking power amplifier. The carrier power amplifier receives a first signal and outputs a first amplified signal, in which a first transistor size adjusting unit is included to adjust an equivalent transistor size based on a mode indication signal. The peaking power amplifier receives a second signal and outputs a second amplified signal, in which a second transistor size adjusting unit is included to adjust an equivalent transistor size based on the mode indication signal.

A fully integrated, programmable mixed-signal radio transceiver comprising a radio frequency integrated circuit (RFIC) which is frequency and protocol agnostic with digital inputs and outputs, the radio transceiver being programmable and configurable for multiple radio frequency bands and standards and being capable of connecting to many networks and service providers. The RFIC includes a tunable resonant circuit that includes a transmission line having an inductance, a plurality of switchable capacitors configured to be switched into and out of the tunable resonant circuit in response to a first control signal, and at least one variable capacitor that can be varied in response to a second control signal, wherein a center resonant frequency of the resonant circuit is electronically tunable responsive to the first and second control signals that control a first capacitance value of the plurality of switchable capacitors and a second capacitance value of the at least one variable capacitor.

An in-phase radio frequency (RF) power amplifier (PA) stage and a quadrature-phase RF PA stage are disclosed. The in-phase RF PA stage includes a first group of arrays of amplifying transistor elements and the quadrature-phase RF PA stage includes a second group of arrays of amplifying transistor elements. A group of array bias signals is based on a selected one of a group of DDS operating modes. Each of the group of array bias signals is a current signal. The in-phase RF PA stage biases at least one of the first group of arrays of amplifying transistor elements based on the group of array bias signals. Similarly, the quadrature-phase RF PA stage biases at least one of the second group of arrays of amplifying transistor elements based on the group of array bias signals.

A high performance and cost effective method of RF-digital hybrid mode power amplifier systems with high linearity and high efficiency for multi-frequency band wideband communication system applications is disclosed. The present disclosure enables a power amplifier system to be field reconfigurable and support multiple operating frequency bands on the same PA system over a very wide bandwidth. In addition, the present invention supports multi-modulation schemes (modulation agnostic), multi-carriers and multi-channels.

A power series type predistorter for multi-frequency bands includes a linear transmission path PL provided with a delay element 5 and distortion generating paths PD1 and PD2 for a plurality of frequency bands in parallel; wherein each of the distortion generating paths PD1 and PD2 for a plurality of frequency bands includes variable band signal extractors 111 and 112 for extracting a signal in each frequency band from input signals and distortion generators 131a and 132a which is provided with the extracted signals and which generates at least one of the odd number distortion components of the signals and making it as an output from the distortion generating paths PD1 and PD2 for frequency bands; and wherein the frequency band controller 6 controls frequency bands of the variable band signal extractors 111 and 112.

A Multi-Mode Multi-Band (MMMB) radio frequency (RF) power amplifier circuit operating at multiple frequency bands. The power amplifier circuit comprises a single wideband power amplifier having high output impedance which is configured to be equal to a load impedance of the load connected to the power amplifier circuit. A bias voltage applied to the wideband power amplifier is changed from a first value to a second value to provide a predetermined output power of the wideband power amplifier to the load with the output impedance of wideband power amplifier being equal to the load impedance. The power amplifier circuit also includes an individual harmonic filter for filtering each frequency band independently.

A 90-degree phase delay power divider part PSPD is connected to an input side of a carrier amplifier Amp1 and a peak amplifier Amp2, and a variable electric length power combiner VTL2 is connected to an output side thereof. A control signal Sig is applied through a control terminal Ctrl of the variable electric length power combiner VTL2, and adjustment is performed in correspondence to a carrier frequency band of a carrier signal RFs so that an electric length of the variable electric length power combiner VTL2 becomes nearly 90 degrees. As a result, an electric length of an output power combining circuit of a Doherty type amplifier can be made variable, and a power-added efficiency can be enhanced for a multi-band or broad band.

Existing multi-band / multi-mode (MB / MM) power amplifiers (PAs) use separate signal paths for the different covered frequency bands. This results in a large degree of hardware duplication and to a large die size and cost. Solutions that achieve hardware sharing between the different signal paths of MB / MM PAs are shown. Such sharing includes bias circuit and bypass capacitors sharing, as well as sharing front-end stages and the output stage of the PA. Signal multiplexing may be realized in the transmitter or at the PA front-end while the signal de-multiplexing can be realized either in the PA output stage or at the front-end of the output stage. Such circuits can be applied with saturated and linear MB / MM PAs with adjacent or non-adjacent bands.

The present invention allows for the use of chip-package co-design of RF transceivers and their components by using discrete active devices in conjunction with passive components. Two particular components are described, including voltage controlled oscillators (VCOs) and low noise amplifiers (LNAs). The high quality passive components for use in the VCOs and LNAs may be obtained by the use of embedded passives in organic substrates. Further, the embedded passives may have multi-band characteristics, thereby allowing multi-band VCOs and LNAs to be implemented with fewer components. In situations where size is a concern, the active devices and passive components utilized in an RF transceiver may be implemented in a low form factor module of less than 1.1 mm thick according to an embodiment of the invention.

There is provided with an amplifier comprising: first and second power amplifiers; a first path configured to output first and second input signals to the first and second power amplifiers; a second path configured to divide a first input signal, output one of divided signals to the first power amplifier and output the other divided signal to the second power amplifier; a first path changeover unit configured to change over the first and second paths; a third path configured to output first and second power amplified signals from the first and second power amplifiers; a fourth path configured to combines a first power amplified signal through an impedance conversion unit from the first power amplifier and a second power amplified signal from the second power amplifier at a combining point and output a combined signal; and a second path changeover unit configured to changeover the third and fourth paths.

A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.

A multi-band low noise amplifier (LNA) 105 includes an input stage having at least two inputs, a first input (103) coupled to a first input transistor for receiving signals in a first frequency band and a second input (104) coupled to a second input transistor for receiving signals in a second frequency band. The second frequency band spaced apart from the first frequency band. A bias network (218) having a band select input is coupled to the first and second input transistor, wherein a signal level applied to the band select input turns on one of the input transistors and turns off the other input transistors. The LNA (105) operates in the first frequency band when the first input transistor is on and the second frequency band when the second input transistor is on. A switched resonator (216) having a control input is provided, wherein application of a control signal to the control input tunes a resonant frequency of the LNA, and provides gain select, for operation in either the first or second frequency band.

A fully integrated, programmable mixed-signal radio transceiver comprising a radio frequency integrated circuit (RFIC) which is frequency and protocol agnostic with digital inputs and outputs, the radio transceiver being programmable and configurable for multiple radio frequency bands and standards and being capable of connecting to many networks and service providers. The RFIC includes a tunable resonant circuit that includes a transmission line having an inductance, a plurality of switchable capacitors configured to be switched into and out of the tunable resonant circuit in response to a first control signal, and at least one variable capacitor that can be varied in response to a second control signal, wherein a center resonant frequency of the resonant circuit is electronically tunable responsive to the first and second control signals that control a first capacitance value of the plurality of switchable capacitors and a second capacitance value of the at least one variable capacitor.

A RF power amplifying device is constituted by a system of a balanced amplifier including first phase shifters, a first RF power amplifier, a second RF power amplifier, second phase shifters, and a power combiner. Transmitting power Pout is detected by a first power level detector connected to an output of the first RF power amplifier, a second power level detector connected to an output of the second RF power amplifier, and an adder. A level control signal from a level control circuit controls transmitting power in response to a transmitting signal with wanted power level and a detected signal of the adder.

A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.

The present invention allows for the use of chip-package co-design of RF transceivers and their components by using discrete active devices in conjunction with passive components. Two particular components are described, including voltage controlled oscillators (VCOs) and low noise amplifiers (LNAs). The high quality passive components for use in the VCOs and LNAs may be obtained by the use of embedded passives in organic substrates. Further, the embedded passives may have multi-band characteristics, thereby allowing multi-band VCOs and LNAs to be implemented with fewer components. In situations where size is a concern, the active devices and passive components utilized in an RF transceiver may be implemented in a low form factor module of less than 1.1 mm thick according to an embodiment of the invention.