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Electron beam irradiation apparatus

a technology of irradiation apparatus and electron beam, which is applied in the field of electric beam irradiation apparatus to achieve the effect of suppressing the influence of electric fields

Active Publication Date: 2014-01-23
HITACHI HIGH-TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent proposes an electron beam irradiation apparatus with multiple detectors that minimize the impact of electric fields they generate. The technical effect is to reduce interference with the detector's performance.

Problems solved by technology

This is considered to be caused by errors in assembling the electron microscope and by disturbance external of the electron microscope.

Method used

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  • Electron beam irradiation apparatus
  • Electron beam irradiation apparatus

Examples

Experimental program
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Effect test

embodiment 11

[0035]In the following description, examples will be described in which by properly adjusting voltages to be applied to the BSE detectors acting as deflectors, an axial shift due to the deflectors will be suppressed. In one example, with the aim for adjusting voltages to be applied to N electrodes (for example, scintillators), voltages to be applied to (N−2) of these electrodes may be fixed and remaining 2 voltages may be adjusted. If all of the N voltages are made variable, a solution cannot be determined definitely and automatic adjustment cannot be executed.

[0036]Specifically, an instance of the number of electrodes N=4 will be described (FIG. 4A). Examples applicable to N≧3 can be generalized with ease. When an amount of shift of the primary beam (shift of field of view or movement of a pattern on the SEM screen) is expressed by (xi, yi), (i=1, 2, 3, 4), under application of voltage to only an i-th electrode (i=1, 2, 3, 4), conditions for preventing the primary beam from axially...

embodiment 2

[0072]Referring now to FIG. 5, an example of a user interface (GUI) will be described which is used when conducting adjustment. The adjustment is carried out in order as below. It will be appreciated that a GUI screen exemplified in FIG. 5 is displayed on a display unit not shown. Then, through setting using the GUI screen, operation conditions of the operation condition program stored in the memory built in the controller device 1231 emplified in FIG. 12 are set.

[0073](i) A pattern for marking is moved to the center of screen (FIG. 4D). After voltages are applied to the electrodes, the pattern is moved by an amount corresponding to a shift amount of primary beam (Xi, Yi) on an observing sample (FIG. 4E).

[0074](ii) The number of electrodes (N in FIG. 5) is inputted. In this example, an instance of N=4 will be described but generally, in the case of N≧3, adjustment can be executed in a similar manner.

[0075](iii) Voltage values to be applied to the individual detectors are inputted. I...

embodiment 3

[0084]When the field of the scanning of primary beam is wide (low magnification observation) or when the image shift amount (a shift amount of the central primary beam from the optical axis) is large, the amount of adjustment of voltage differs for an area close to the optical axis and for an area distant from the optical axis. In FIG. 7A, a primary beam 701 is deflected by means of a deflector 702, passes through an objective lens 707 and irradiates on a sample 708. A trajectory 705 runs through the optical axis and the primary beam is deflected to the maximum during scanning to travel through a trajectory 706. In FIG. 7B, when the image shift is zero, the trajectory 705 is held but when deflection by the image shifter 703 affects, a trajectory 706 participates. In the case of this example, shifting of the field of view is executed within a field of view movable range 709. The distances from the electrode 704 to the trajectories 705 and 706 differ from each other and strictly, amou...

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Abstract

The present invention has for its object to provide an electron beam irradiation apparatus which can suppress influences the electric fields generated by a plurality of backscattered electron detectors have. To attain the above object, an electron beam irradiation apparatus equipped with a scanning deflector comprises a plurality of backscattered electron detectors, a power source for detectors which applies voltages to the plural backscattered electron detectors, respectively, and a controller device which adjusts application voltages the power source for detectors delivers, on the basis of an image shift when the voltages are applied to the plural backscattered electron detectors.

Description

BACKGROUND OF THE INVENTION[0001]The present invention relates to electron beam irradiation apparatuses and more particularly, to an electron beam irradiation apparatus having a plurality of detectors for detection of backscattered electrons.[0002]A scanning electron microscope (SEM) representing one type of electron beam irradiation apparatus detects secondary electrons (SE's) and backscattered electrons (BSE's: hereinafter referred to sometimes as reflected electrons), the SE's and BSE's being given of from a sample under irradiation of an electron beam (hereinafter referred to as a primary electron beam or primary electrons) on the sample. By converting signals of the SE's and BSE's into images and line profiles, the sample can be observed, inspected or measured. Especially, the electron microscope is widely applied to measurement of semiconductor devices and therefore, techniques for the semiconductor device measurement are required to be applicable to patterns of a variety of c...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01J37/244
CPCH01J37/244G01N23/203H01J37/28H01J2237/24475H01J37/29
Inventor HOQUE, SHAHEDULKAWANO, HAJIME
Owner HITACHI HIGH-TECH CORP