Atomic layer removal process with higher etch amount

a technology of atomic layer and etching amount, which is applied in the direction of basic electric elements, semiconductor/solid-state device manufacturing, electric apparatus, etc., can solve the problems of increasing the effectiveness of “reset”, limiting the amount of material that may be etched per cycle, and increasing the total process time. , to achieve the effect of improving the overall etch rate and throughput of the alr etch process, excellent process control, and limiting the amount of material
US20150118848A1Inactive Publication Date: 2015-04-30NOVELLUS SYSTEMS
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
NOVELLUS SYSTEMS
Publication Date
2015-04-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.
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Description

RELATED APPLICATIONS

[0001] This application is a continuation of and claims priority to U.S. application Ser. No. 13 / 244,032, titled “ATOMIC LAYER REMOVAL PROCESS WITH HIGHER ETCH AMOUNT,” filed Sep. 23, 2011, which is a divisional of U.S. patent application Ser. No. 12 / 343,102 (now U.S. Pat. No. 8,058,179), titled “ATOMIC LAYER REMOVAL PROCESS WITH HIGHER ETCH AMOUNT,” filed Dec. 23, 2008, which are incorporated herein by reference for all purposes.FIELD OF THE INVENTION

[0002] This invention relates to electronic device fabrication processes and associated apparatus. More specifically, it relates to dry etch processes for removing dielectric films.BACKGROUND OF THE INVENTION

[0003] It is often necessary in semiconductor processing to remove or etch dielectric films from a substrate surface. Various etching processes are available to etch different materials and geometries at different rates. Considerations for choosing the appropriate etch process include etch rates, selectivity to oth...

Claims

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