Magnetic tunnel junction and method for fabricating a magnetic tunnel junction
a magnetic tunnel junction and tunnel junction technology, applied in the field of electronic devices, can solve the problems of difficult etching of mtjs, loss of storage information of volatile rams, and difficulty in etching magnetic tunnel junctions
Inactive Publication Date: 2015-10-01
QUALCOMM INC
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Benefits of technology
The patent describes a method for making a magnetic tunnel junction (MTJ) device, which can be used in electronic devices such as memory devices. The method involves forming layers on a substrate and etching them to create the MTJ. The patent also describes a computer-readable medium that includes instructions for carrying out the method. The technical effect of this patent is to provide a reliable and effective method for making MTJ devices, which can be used in various electronic devices.
Problems solved by technology
Volatile RAM loses its stored information whenever power is removed.
Despite the characteristics described above, the memory cell 301 is not a perfect device.
Etching an MTJ is a challenging part of the MTJ fabrication process.
Method used
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Introduction
[0028]An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. In an example, a two-step etch fabrication process is provided.
[0029]The exemplary apparatuses and methods disclosed herein advantageously address the long-felt industry needs, as well as other previously unidentified needs, and mitigate shortcomings of the conventional methods and apparatus. For example, an advantage provided by the disclosed apparatuses and methods herein is an improvement in magnetic tunnel junction (MTJ) device quality and consistency over conventional devices. Another advantage is that the provided two-step etch process simplifies a first etching of an MTJ while causing less etching-induced damage to the MTJ. The two-step etch process also relaxes a second etching of a top electrode and a pin layer of the MTJ. Thus, the disclosed methods reduce etch requirements (e.g., improve an etch margin). Also, etching damage ...
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An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.
Description
FIELD OF DISCLOSURE[0001]This disclosure relates generally to electronics, and more specifically, but not exclusively, to an improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device.BACKGROUND[0002]Random access memory (RAM) is a ubiquitous component of modern digital architectures. RAM can be a standalone device, or can be integrated in a device that uses the RAM, such as a microprocessor, microcontroller, application specific integrated circuit (ASIC), system-on-chip (SoC), and other like devices. RAM can be volatile or non-volatile. Volatile RAM loses its stored information whenever power is removed. Non-volatile RAM can maintain its memory contents even when power is removed. Although non-volatile RAM has advantages, such as an ability to retain its contents without applied power, conventional non-volatile RAM has slower read / write times than volatile RAM.[0003]Magnetoresistive Random Access Memory (MRAM) is a non-volatile...
Claims
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IPC IPC(8): H01L43/12H01L43/08H10N50/01H10N50/10H10N50/80
CPCH01L43/08H01L43/12G11C11/161H10B61/00H10N50/01H10B61/10H10N50/80H10N50/10
Inventor LI, XIALEE, KANGHOCHEN, WEI-CHUANLU, YUPARK, CHANDOKANG, SEUNG HYUK
Owner QUALCOMM INC