Display device and manufacturing method thereof
a technology of a display device and a manufacturing method, which is applied in the direction of instruments, non-linear optics, optics, etc., can solve the problems of reduced visibility, increased power consumption, and device including a reflective liquid crystal display element has problems of dark display, etc., and achieves high visibility, low power consumption, and high convenience.
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embodiment 1
[0097]In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS. 1 to 19.
[0098]FIG. 1A is a bottom view illustrating the structure of a display device 300 of one embodiment of the present invention. FIG. 1B1 is a bottom view illustrating part of FIG. 1A. FIG. 1B2 is a bottom view omitting some components illustrated in FIG. 1B1.
[0099]FIGS. 2A, 2B, and 2C are cross-sectional views illustrating the structure of the display device 300 of one embodiment of the present invention. FIG. 2A is a cross-sectional view taken along dashed-dotted lines X1-X2, X3-X4, X5-X6, X7-X8, X9-X10, and X11-X12 in FIG. 1A. FIG. 2B is a cross-sectional view illustrating part of the display device. FIG. 2C is a cross-sectional view illustrating other part of the display device.
[0100]FIG. 3 illustrates a circuit of a pixel 302 included in the display device 300 of one embodiment of the present invention.
[0101]As illustrated in FIG. 1A, the display ...
embodiment 2
[0447]In this embodiment, a transistor which can be used in a display device of one embodiment of the present invention is described with reference to FIGS. 20 to 34.
[0448]FIG. 20A is a top view of a transistor 200 that can be used in a display device of one embodiment of the present invention. FIG. 20B is a cross-sectional view taken along a dashed-dotted line X1-X2 in FIG. 20A. FIG. 20C is a cross-sectional view taken along a dashed-dotted line Y1-Y2 in FIG. 20A. Note that in FIG. 20A, some components of the transistor 200 (e.g., an insulating film serving as a gate insulating film) are not illustrated to avoid complexity. Furthermore, the direction of the dashed-dotted line X1-X2 may be referred to as a channel length direction, and the direction of the dashed-dotted line Y1-Y2 may be referred to as a channel width direction. As in FIG. 20A, some components are not illustrated in some cases in top views of transistors described below.
[0449]The transistor 200 includes a conductive...
embodiment 3
[0636]In this embodiment, the structure and the like of an oxide semiconductor will be described with reference to FIGS. 35 to 39.
[0637]An oxide semiconductor is classified into a single crystal oxide semiconductor and a non-single-crystal oxide semiconductor. Examples of a non-single-crystal oxide semiconductor include a c-axis-aligned crystalline oxide semiconductor (CAAC-OS), a polycrystalline oxide semiconductor, a nanocrystalline oxide semiconductor (nc-OS), an amorphous-like oxide semiconductor (a-like OS), and an amorphous oxide semiconductor.
[0638]From another perspective, an oxide semiconductor is classified into an amorphous oxide semiconductor and a crystalline oxide semiconductor. Examples of a crystalline oxide semiconductor include a single crystal oxide semiconductor, a CAAC-OS, a polycrystalline oxide semiconductor, and an nc-OS.
[0639]An amorphous structure is generally thought to be isotropic and have no non-uniform structure, to be metastable and not have fixed pos...
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