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Insulating structure of high electron mobility transistor and manufacturing method thereof

a technology of electron mobility and transistor, which is applied in the direction of basic electric elements, electrical appliances, semiconductor devices, etc., can solve the problem of not being easily dissipated to other places, and achieve the effect of not being easily dissipated

Active Publication Date: 2021-01-14
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor device with improved insulation. The invention includes the formation of two sidewall insulation structures on both sides of an insulation doped region. This prevents the activated ions from dissipating to other places during a heating step, ensuring the insulating effect of the insulation doped region. Thus, the invention ensures better semiconductor device performance and stability.

Problems solved by technology

Since the two sidewall insulating structures are disposed on both sides of the insulating doped region, even if a subsequent heating step is performed on the semiconductor device, the activated ions are blocked by the sidewall insulating structures, so that they are not easily dissipated to other places to ensure the insulating effect of the insulating doped region.

Method used

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  • Insulating structure of high electron mobility transistor and manufacturing method thereof
  • Insulating structure of high electron mobility transistor and manufacturing method thereof
  • Insulating structure of high electron mobility transistor and manufacturing method thereof

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Embodiment Construction

[0016]To provide a better understanding of the present invention to users skilled in the technology of the present invention, preferred embodiments are detailed as follows. The preferred embodiments of the present invention are illustrated in the accompanying drawings with numbered elements to clarify the contents and the effects to be achieved.

[0017]Please note that the Figures are only for illustration and the Figures may not be to scale. The scale may be further modified according to different design considerations. When referring to the words “up” or “down” that describe the relationship between components in the text, it is well known in the art and should be clearly understood that these words refer to relative positions that can be inverted to obtain a similar structure, and these structures should therefore not be precluded from the scope of the claims in the present invention.

[0018]Please refer to FIG. 1 to FIG. 8. FIG. 1 to FIG. 8 are schematic diagrams of a method for man...

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Abstract

An insulating structure of a high electron mobility transistor (HEMT) is provided, which comprises a gallium nitride layer, an aluminum gallium nitride layer disposed on the gallium nitride layer, an insulating doped region disposed in the gallium nitride layer and the aluminum gallium nitride layer, and two sidewall insulating structures disposed at two sides of the insulating doped region respectively.

Description

BACKGROUND OF THE INVENTION1. Field of the Invention[0001]The invention relates to an insulating structure of a high electron mobility transistor and a manufacturing method thereof.2. Description of the Prior Art[0002]Due to their semiconductor characteristics, III-V semiconductor compounds may be applied in many kinds of integrated circuit devices, such as high power field effect transistors, high frequency transistors, or high electron mobility transistors (HEMTs). In the high electron mobility transistor, two semiconductor materials with different band-gaps are combined and a heterojunction is formed at the junction between the semiconductor materials as a channel for carriers. In recent years, gallium nitride (GaN) based materials have been applied in the high power and high frequency products because of their properties of wider band-gap and high saturation velocity. A two-dimensional electron gas (2DEG) may be generated by the piezoelectricity property of the GaN-based materia...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/778H01L29/66H01L21/02
CPCH01L29/7787H01L21/02194H01L21/02178H01L29/66462H01L29/7786H01L29/0642H01L21/7605H01L29/2003H01L21/76283H01L21/2654H01L21/76224
Inventor CHANG, CHUN-MINGLIAO, WEN-JUNG
Owner UNITED MICROELECTRONICS CORP