Logic device using spin torque

Abstract

A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.

Description

CROSS REFERENCE TO RELATED APPLICATION[0001]The present application claims priority to Korean Patent Application No. 10-2019-0132010, filed Oct. 23, 2019, the entire contents of which is incorporated herein for all purposes by this reference.BACKGROUND OF THE INVENTIONField of the Invention[0002]The present invention relates to a logic function device using spin torque and, more particularly, to a logic device that is capable of reconfiguring the logic function through electrical signals in the same structure.Description of the Related Art[0003]A logic device, which performs logic operations in integrated circuits, is one of high added value products along with a memory device. However, recently, as silicon-based electronic device technology (complementary metal-oxide semiconductor, CMOS) is approaching physical limitations, it is difficult to expect further density improvement, and problems such as high power consumption and heat generation are also caused. Accordingly, it is requi...

AI Technical Summary

Benefits of technology

The present invention provides an reconfigurable logic device that can electrically reset a logic function using a spin torque technology. This device includes one or more function reconfiguring units and input units. The function reconfiguring units have magnetization in one direction set by a spin torque current, and the output terminal is formed at the end of the function reconfiguring unit. The magnetization direction of the function reconfiguring unit and the input unit can be parallel or anti-parallel. The output voltage is determined based on the magnetization direction of the function reconfiguring unit and the input unit. The device can perform logical operations and has improved performance compared to existing silicon devices.

Problems solved by technology

However, recently, as silicon-based electronic device technology (complementary metal-oxide semiconductor, CMOS) is approaching physical limitations, it is difficult to expect further density improvement, and problems such as high power consumption and heat generation are also caused.

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