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Semiconductor light-emitting device and method for manufacturing the same

a technology of semiconductors and light-emitting devices, which is applied in the direction of semiconductor devices, basic electric elements, electrical equipment, etc., to achieve the effect of high reliability and improvement of light extraction efficiency

Pending Publication Date: 2022-11-10
NIKKISO COMPANY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The solution enhances light extraction efficiency and maintains high reliability of ultraviolet semiconductor light-emitting devices by forming a silicone resin lens shape with a contact angle greater than 15°, reducing total reflection and minimizing degradation from UV radiation, while avoiding the use of additives and molding, which can degrade the resin.

Problems solved by technology

In case of shaping and curing by a casting method such as molding, there are possibilities that the solvent or catalyst remains and it is thus not possible to sufficiently cure the resin, or the ultraviolet radiation causes change of material properties and resulting degradation of the resin and this negatively affects reliability of the light-emitting element.
In addition, even if the silicone resin is successfully applied so that the contact angle is not less than the certain angle mentioned above, it is difficult to cure the silicone resin while maintaining its shape since viscosity of the silicone resin decreases in the subsequent curing step in which the silicone resin is heated, and this causes the silicone resin to overflow from the reflector or to trickle down along the outer side wall of the reflector, as described above.
On the other hand, when adding viscosity adjustment additives to maintain the shape or molding using a mold, the additives or the residual solvent or catalyst components are decomposed by ultraviolet radiation at a wavelength of not more than 360 nm and this significantly accelerates degradation of the silicone resin, resulting in a significant decrease in reliability of the element.
As described above, for ultraviolet LEDs with a wavelength of not more than 360 nm, it is difficult to simultaneously achieve formation of a lens-shaped silicone resin with a contact angle of not less than a certain angle by naturally shaping and curing the resin and ensuring of high reliability.
As a result, it may not be possible to sufficiently prevent total reflection of light at an interface between the silicone resin and air and thus may not be possible to sufficiently obtain the light extraction efficiency improvement effect by sealing with the silicone resin.

Method used

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  • Semiconductor light-emitting device and method for manufacturing the same
  • Semiconductor light-emitting device and method for manufacturing the same
  • Semiconductor light-emitting device and method for manufacturing the same

Examples

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embodiment

[0027]Nitride Semiconductor Ultraviolet Light-Emitting Device

[0028]FIG. 1 is a schematic cross-sectional view showing a configuration of a nitride semiconductor ultraviolet light-emitting device in the embodiment of the invention. As shown in FIG. 1, a nitride semiconductor ultraviolet light-emitting device (hereinafter, also simply referred to as “light-emitting device”) 1 in the embodiment of the invention is provided with a nitride semiconductor light-emitting element (hereinafter, also simply referred to as “light-emitting element”) 2 emitting ultraviolet radiation (also called “ultraviolet light”, the same applies hereinafter) at an emission wavelength of not more than 360 nm, a package substrate 3 housing the light-emitting element 2, a sealing material 4 sealing the light-emitting element 2, a thin film layer (hereinafter, also simply referred to as “thin film”) 5 which is formed on the package substrate 3 at a position between the package substrate 3 and the sealing material...

examples

[0071]The light-emitting devices 1 described above were made using the light-emitting element 2 having an emission wavelength 310 nm and a light output of about 60 mW at a current of 350 mA. Meanwhile, a light-emitting device having the sealing material 4 with the flat upper surface 4a as shown in FIG. 4 was prepared as Comparative Example. In the present Examples, the thin film layer 5 was formed of 1 μm-thick gold (Au), and the adhesive layer 6 bonding the rim face 3c of the package substrate 3 to the lower surface of the thin film layer 5 was formed of tungsten (W) (thickness not specified) formed on the rim face 3c of the package substrate 3 and 1 μm-thick nickel (Ni) further formed thereon to improve adhesion of the thin film layer 5.

[0072]Light output of about 75 mW was obtained from the light-emitting device 1 with the contact angle θ of about 15° (hereinafter, also referred to as “Example 1”). That is, in Example 1, light output was improved about 1.25 times. Meanwhile, ligh...

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Abstract

A semiconductor light-emitting device includes a semiconductor light-emitting element that emits ultraviolet radiation at a wavelength of not more than 360 nm, a package substrate that houses the semiconductor light-emitting element, a thin film layer that is formed on the package substrate and has a predetermined thickness, and a sealing material made of a silicone resin which is provided on the thin film layer so as to have a lens shape and seals the semiconductor light-emitting element, in which the sealing material forms a contact angle of not less than 15° with the thin film layer.

Description

[0001]The present application is a continuation application of U.S. Ser. No. 16 / 845,158 filed on Apr. 10, 2020 which claims priority to Japanese Patent Application No. 2019-076203 filed on Apr. 12, 2019, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTION1. Field of the Invention[0002]The invention relates to a semiconductor light-emitting device and a method for manufacturing the same, in particular, to a semiconductor light-emitting device provided with a nitride semiconductor light-emitting element emitting ultraviolet radiation and a method for manufacturing the same.2. Related Art[0003]In recent years, a resin-sealed lighting device having a semiconductor light-emitting element sealed with a resin has been provided (see JP 2015-15404A).[0004]The resin-sealed lighting device described in JP 2015-15404A has an LED module and a circuit board on which the LED module is fixed. The LED module is provided with a substrate, a semiconductor ligh...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L33/56H01L33/58
CPCH01L33/56H01L33/58H01L2933/0058H01L2933/005H01L33/54
Inventor YAMAMOTO, SHUICHIROICHINOKURA, HIROYASU
Owner NIKKISO COMPANY