MOSFET structure with high mechanical stress in the channel

a mosfet and channel technology, applied in the direction of semiconductor devices, electrical equipment, transistors, etc., can solve the problems of inability to meet the requirements of the application, the metal oxide semiconductor transistors are beginning to reach the traditional scaling limit, and the carrier transport properties are changing, so as to improve the performance of the device, increase the drive current, and improve the effect of carrier transport properties
US7002209B2Active Publication Date: 2006-02-21AURIGA INNOVATIONS INC
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Patents(United States)
Current Assignee / Owner
AURIGA INNOVATIONS INC
Publication Date
2006-02-21

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Abstract

The present invention provides a semiconducting device including at least one gate region including a gate conductor located on a surface of a substrate, the substrate having an exposed surface adjacent the gate region; a silicide contact located adjacent the exposed surface; and a stress inducing liner located on the silicide contact, the exposed surface of the substrate adjacent to the gate region and the at least one gate region, wherein the stress inducing liner provides a stress to a device channel portion of the substrate underlying the gate region. The stress produced on the device channel is a longitudinal stress on the order of about 200 MPa to about 2000 MPa. The present invention also provides a method for forming the above-described semiconducting device.
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Description

FIELD OF THE INVENTION

[0001] The present invention relates to semiconductor devices having enhanced electron and hole mobilities, and more particularly, to semiconductor devices that include a silicon (Si)-containing layer having enhanced electron and hole mobilities. The present invention also provides methods for forming such semiconductor devices.BACKGROUND OF THE INVENTION

[0002] For more than three decades, the continued miniaturization of silicon metal oxide semiconductor field effect transistors (MOSFETs) has driven the worldwide semiconductor industry. Various showstoppers to continued scaling have been predicated for decades, but a history of innovation has sustained Moore's Law in spite of many challenges. However, there are growing signs today that metal oxide semiconductor transistors are beginning to reach their traditional scaling limits. A concise summary of near-term and long-term challenges to continued complementary metal oxide semiconductor (CMOS) scaling can be foun...

Claims

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