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MOSFET structure with high mechanical stress in the channel

a mosfet and channel technology, applied in the direction of semiconductor devices, electrical equipment, transistors, etc., can solve the problems of inability to meet the requirements of the application, the metal oxide semiconductor transistors are beginning to reach the traditional scaling limit, and the carrier transport properties are changing, so as to improve the performance of the device, increase the drive current, and improve the effect of carrier transport properties

Active Publication Date: 2006-02-21
AURIGA INNOVATIONS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This approach increases device performance by 5% to 50% compared to prior FETs, while maintaining or improving conformality and reducing unwanted stress effects, and allows for superior stress distribution without the need for additional processing steps.

Problems solved by technology

However, there are growing signs today that metal oxide semiconductor transistors are beginning to reach their traditional scaling limits.
Since it has become increasingly difficult to improve MOSFETs and therefore CMOS performance through continued scaling, methods for improving performance without scaling have become critical.
This results in changes in carrier transport properties, which can be dramatic in certain cases.
This approach is unacceptable since it limits the scaling of the distance between the contact 50 and the gate conductor 3.
This approach is also unacceptable because it requires additional processing and has negative effects on the portions of the device in which a stress in not desired.

Method used

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  • MOSFET structure with high mechanical stress in the channel
  • MOSFET structure with high mechanical stress in the channel
  • MOSFET structure with high mechanical stress in the channel

Examples

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Embodiment Construction

[0035]The present invention provides a field effect transistor (FET), and a method of forming thereof, comprising a gate structure on a semiconducting substrate, in which a longitudinal stress is applied to a portion of the semiconducting substrate underlying the gate region to increase the FET's performance. The present invention advantageously provides a longitudinal stress to the portion of the substrate underlying the gate region by forming a stress inducing liner positioned in close proximity to the gate region and atop a surface of the substrate adjacent to and planar with the portion of the substrate on which the gate region is formed. The present invention is now discussed in more detail referring to the drawings that accompany the present application. In the accompanying drawings, like and / or corresponding elements are referred to by like reference numbers. In the drawings, a single gate region is shown and described. Despite this illustration, the present invention is not ...

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Abstract

The present invention provides a semiconducting device including at least one gate region including a gate conductor located on a surface of a substrate, the substrate having an exposed surface adjacent the gate region; a silicide contact located adjacent the exposed surface; and a stress inducing liner located on the silicide contact, the exposed surface of the substrate adjacent to the gate region and the at least one gate region, wherein the stress inducing liner provides a stress to a device channel portion of the substrate underlying the gate region. The stress produced on the device channel is a longitudinal stress on the order of about 200 MPa to about 2000 MPa. The present invention also provides a method for forming the above-described semiconducting device.

Description

FIELD OF THE INVENTION[0001]The present invention relates to semiconductor devices having enhanced electron and hole mobilities, and more particularly, to semiconductor devices that include a silicon (Si)-containing layer having enhanced electron and hole mobilities. The present invention also provides methods for forming such semiconductor devices.BACKGROUND OF THE INVENTION[0002]For more than three decades, the continued miniaturization of silicon metal oxide semiconductor field effect transistors (MOSFETs) has driven the worldwide semiconductor industry. Various showstoppers to continued scaling have been predicated for decades, but a history of innovation has sustained Moore's Law in spite of many challenges. However, there are growing signs today that metal oxide semiconductor transistors are beginning to reach their traditional scaling limits. A concise summary of near-term and long-term challenges to continued complementary metal oxide semiconductor (CMOS) scaling can be foun...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L29/76H01L29/94H01L31/062H01L31/113H01L31/119H01L21/336H01L21/8234H01L21/8238H01L29/78
CPCH01L29/6653H01L29/7843H01L21/823807H01L29/7833H01L29/6659
Inventor CHEN, XIANGDONGCHIDAMBARRAO, DURESETIGLUSCHENKOV, OLEGGREENE, BRIANRIM, KERNYANG, HAINING S.
Owner AURIGA INNOVATIONS INC
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