Piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media for high-density memory

Abstract

A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and / or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips. This integrated microelectromechanical (MEMS) and / or nanoelectromechanical (NEMS) system and structure can be efficiently used to imprint data in the ferroelectric layer for memory storage with high density in the gigabit (Gb) to terabit (Tb) range. An alternative memory media to the ferroelectric layer can be a phase change material that exhibits two orders of magnitude difference in electrical resistance between amorphous and crystalline phases.

Description

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT[0001]The United States Government has rights in this invention pursuant to Contract No. W-31-109-ENG-38 between the United States Government and The University of Chicago and / or pursuant to Contract No. DE-AC02-06CH11357 between the United States Government and UChicago Argonne, LLC representing Argonne National Laboratory.BACKGROUND OF THE INVENTION[0002]This invention relates to high density memory, and more particularly, to a piezoelectrically actuated ultrananocrystalline diamond tip array integrated with ferroelectric or phase change media.[0003]Electronic memory is useful to input, store and read information, such as data, graphics, videos, etc. Data, graphics, photographs, charts, videos, movies, and internet downloads often require substantial electronic memory. Many stand alone memories and embedded memories for multifunctional electronic devices, such as cell phones with image, video, and voice recording, port...

AI Technical Summary

Benefits of technology

The patent describes a new type of data storage device that uses piezoactuated technology to actuate small tips made of diamond or other hard materials to make contact with the memory media. This technology provides a more reliable and efficient way to store data compared to other alternatives. The device is compact, portable, and can be used in standalone memory devices or embedded in other electronic devices. The piezoactuated technology allows for low voltage operation and compatibility with CMOS technology. The device can store information using either ferroelectric or phase change memory media, and can provide high-density storage in the Gb to Tb range. The user-friendly piezoactuated storage device is ideal for use in portable and embedded applications.

Problems solved by technology

Volatile memory loses data as soon as the system is turned off and requires constant power to remain viable.

Since real capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically.

Significantly, the memory density of flash memory in compact flash (CF) memory cards and USB flash drives, limits its capacity and performance.

Furthermore, flash memory devices, such as compact flash (CF) memory cards and USB flash drives can sustain only a limited number of write and erase cycles before failure.

Images