Semiconductor device and stacked-type semiconductor device
a semiconductor and semiconductor technology, applied in the direction of solid-state devices, printed circuit structure associations, basic electric elements, etc., can solve the problems of reduced rigidity of semiconductor devices, increased warping of csp or bga packages, defective solder joints, etc., to avoid defective solder joints, reduce size and thickness, and prolong the life of solder joints
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
first embodiment
[0016]FIGS. 1A and 1B illustrate a schematic configuration of a semiconductor device according to a first embodiment of the present invention. As shown in FIG. 1A, a semiconductor device 1 includes a semiconductor element 2 and an interposer substrate 6 with the semiconductor element 2 mounted thereon, and is mounted on a printed wiring board 11, such as a motherboard, serving as a printed wiring board.
[0017]The surface of the interposer substrate 6 on which the semiconductor element 2 is mounted will be defined as a top surface 6a. The top surface 6a is provided with a wire-bonding electrode 4. The semiconductor element 2 and the electrode 4 are connected to each other via a wire 3. The semiconductor element 2, the wire 3, and the electrode 4 are covered with molded resin 7. Although a wire-bonding technique is used for the mounting of the semiconductor element 2 in the first embodiment, a flip-chip technique may be used as an alternative. Furthermore, multiple semiconductor elemen...
first practical example
[0032]Referring to FIGS. 1A and 1B, the openings 8c and 8d of the solder resist 8 that respectively correspond to the electrodes 5c and 5d are given a height of 20 micrometers from the electrodes 5c and 5d. The openings 8b and 8e of the solder resist 8 that respectively correspond to the electrodes 5b and 5e are given a height of 40 micrometers from the electrodes 5b and 5e. The openings 8a and 8f of the solder resist 8 that respectively correspond to the electrodes 5a and 5f are given a height of 60 micrometers from the electrodes 5a and 5f. The solder bumps 9a to 9f formed on the respective electrodes 5a to 5f have a diameter of 300 micrometers. In this case, the height from the surface of each electrode 5a to 5f to the end of the corresponding solder bump 9a to 9f is varied as follows. Specifically, the openings 8c and 8d have a height of 20 micrometers and the solder bumps 9c and 9d have a height of 235 micrometers, the openings 8b and 8e have a height of 40 micrometers and the ...
second embodiment
[0034]Next, a semiconductor device according to a second embodiment of the present invention will be described with reference to FIG. 3. In FIG. 3, components that are the same as those in FIGS. 1A and 1B are given the same reference numerals, and descriptions thereof will be omitted. An interposer substrate 6 of a semiconductor device 1A according to the present invention shown in FIG. 3 differs from that in the first embodiment in that the interposer substrate 6 warps upward into a convex shape during a solder joining process (210 to 240 degrees (Celsius)) of the solder bumps 9a to 9f.
[0035]In the semiconductor device 1A, the height of the openings 8a to 8f of the solder resist 8 that respectively correspond to the electrodes 5a to 5f increases with increasing gap distance between the electrodes 5a to 5f and the board electrodes 10a to 10f. In detail, the height of the solder resist 8 is set such that the height of the openings 8a to 8f increases from the periphery of the interpo...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More