Additional post-glass-removal processes for enhanced cell efficiency in the production of solar cells

a technology of post-removal and post-removal process, which is applied in the direction of photovoltaic energy generation, electrical equipment, climate sustainability, etc., can solve the problem of limited cell efficiency obtained with the process sequence described in fig. 1

Active Publication Date: 2007-12-04
BIJKER MARTIN D
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009]It is, therefore, an object of the present invention to provide an improved process sequence for the production of solar cells from raw crystalline p-type silicon wafer material.
[0011](a) removing any saw-damage on the wafer by a wet-chemical etching process, thereby defining surface texture on the wafer;

Problems solved by technology

The cell efficiency obtained with the process sequence described in FIG. 1 is limited by the surface condition that is obtained after the phosphorous glass removal.

Method used

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Examples

Experimental program
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Effect test

first embodiment

[0037]In the first embodiment, as shown in FIG. 2(a), the wafer is submitted to a thermal anneal under oxygen atmosphere followed by a wet-chemical oxide removal. The anneal reduces the surface phosphorous concentration by diffusion, reduces lattice defects in the emitter and oxidizes the silicon surface.

second embodiment

[0038]In the second embodiment, as shown in FIG. 2(b), both a surface oxide is obtained and subsequently removed with wet chemistry. This sequence allows for an integration of the phosphorous glass removal, the wet-channel oxidation, and the SiOx removal into a single machine.

[0039]A combination of the two sequences described above is also envisioned.

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Abstract

A method is provided for the production of solar cells from raw crystalline p-type silicon wafer material. The surface condition prior to SiNx deposition is improved by providing additional process steps following the phosphorous glass removal and prior to the SiNx anti-reflection coating deposition. In one embodiment, the wafer is submitted to a thermal anneal under oxygen atmosphere followed by a wet-chemical oxide removal. The anneal reduces the surface phosphorous concentration by diffusion, reduces lattice defects in the emitter and oxidizes the silicon surface. In another embodiment, both a surface oxide is obtained and subsequently removed with wet chemistry. This sequence allows for an integration of the phosphorous glass removal, the wet-chemical oxidation, and the SiOx removal into a single machine.

Description

FIELD OF THE INVENTION[0001]This invention relates to the process sequence in the production of solar cells from raw crystalline p-type silicon wafer material.[0002]Process tests show that the cell efficiencies obtained with the current production lines can be improved significantly by inserting one or more additional process steps.BACKGROUND OF INVENTION[0003]The process sequence of the existing production lines is shown in FIG. 1. The saw-damage and impurities present on the raw silicon wafers are removed with a wet etching. Simultaneously with this process a defined surface texture is obtained. A phosphorous containing precursor is deposited that serves as the phosphorous source during the emitter diffusion in a horizontal passage furnace. A phosphorous glass layer is formed during diffusion. This layer is removed with wet etching prior to the deposition of a SiNx anti-reflection coating. Front- and back-side metallization is realized by screen printing and firing of metallizatio...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/336
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor BIJKER, MARTIN D.
Owner BIJKER MARTIN D
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