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LED and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which can be applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of reduced qualification rate, inconvenience, easy peeling, etc., and achieve the effect of improving the qualification rate, reducing production costs, and reducing light intensity loss.

Inactive Publication Date: 2007-10-24
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the shortcoming of this U.S. Patent No. 6,258,699 is that it is easy to peel off after bonding, which causes a decline in the qualified rate
[0005] In summary, the light-emitting diodes of the prior art obviously have inconveniences and defects in actual use, so it is necessary to improve them.

Method used

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  • LED and manufacturing method thereof
  • LED and manufacturing method thereof
  • LED and manufacturing method thereof

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Embodiment Construction

[0021] Hereinafter, the present invention will be described in detail.

[0022] In semiconductor light-emitting components, aluminum gallium indium phosphide (AlGaInP) is a common material. Since aluminum gallium indium phosphide is a direct energy gap material, by properly adjusting the ratio of indium / (aluminum+gallium) in the aluminum gallium indium phosphide material, the crystal lattice of the aluminum gallium indium phosphide material and the gallium arsenide substrate can be made Constant matches. If the ratio of aluminum and gallium in the aluminum gallium indium phosphide material is adjusted, the emission wavelength can be between 550nm (green light) and 680nm (red light). Since the AlGaInP material can be easily adjusted in the component epitaxy, the wavelength to be emitted can be easily obtained in a linear manner, so it is very suitable for manufacturing light-emitting components in the visible light region.

[0023] In addition, the energy gap of the aluminum ...

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Abstract

The invention discloses a light emitting diode and method for manufacturing same. The light emitting diode at least comprises: a transparent substrate plate; a reflection layer disposed on one side of the transparent substrate plate; an adhesion layer on the other side of the transparent substrate plate; a semiconductor great crystal structure disposed on the adhesion layer, and a transparent inductive layer disposed on the n-type contact layer of the semiconductor great crystal structure; wherein the semiconductor great crystal structure comprises at least an n-type contact layer which can be a continuous planar structure, a continuous netted or strip surface structure, or cylindrical or corner post structure with discontinuous surface.

Description

technical field [0001] The invention relates to a light-emitting diode and a manufacturing method thereof, in particular to a high-brightness light-emitting diode manufactured by chip bonding technology and a manufacturing method thereof. Background technique [0002] Please refer to FIG. 1 , which is a cross-sectional view of a conventional LED structure. The LED structure includes a substrate 100, an n-type semiconductor buffer layer (Buffer Layer) 102, an n-type semiconductor contact layer (Contact Layer) 104, an n-type semiconductor cladding layer (Cladding Layer) 106, and an active layer (ActiveLayer) stacked in sequence. 108, a p-type semiconductor covering layer 110, a p-type semiconductor contact layer 112, and a p-type contact pad (Contact Pad) 114 located on a part of the p-type semiconductor contact layer 112 and an n-type contact pad located on the exposed n-type semiconductor contact layer 104. type contact pad 116 . [0003] Generally, the conventional light ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 陈锡铭
Owner EPISTAR CORP